All IGBT. MBQ60T65PES Datasheet


MBQ60T65PES IGBT. Datasheet pdf. Equivalent

Type Designator: MBQ60T65PES

Marking Code: 60T65PES

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 428

Maximum Collector-Emitter Voltage |Vce|, V: 650

Collector-Emitter saturation Voltage |Vcesat|, V: 1.85

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 100

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 54

Maximum Collector Capacity (Cc), pF: 270

Package: TO247

MBQ60T65PES Transistor Equivalent Substitute - IGBT Cross-Reference Search


MBQ60T65PES Datasheet (PDF)

..1. mbq60t65pes.pdf Size:584K _magnachip


MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation Features General Description High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field V = 1.85V @ I = 60A CE(sat) C Stop Trench IGBT 2nd Generation Technology, which is not only E = 0.53mJ @ T = 25C off C the highest efficiency capable of switching behavio

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