All IGBT. MBQ60T65PES Datasheet

 

MBQ60T65PES Datasheet and Replacement


   Type Designator: MBQ60T65PES
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 60T65PES
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 428 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 54 nS
   Coesⓘ - Output Capacitance, typ: 270 pF
   Qg ⓘ - Total Gate Charge, typ: 95 nC
   Package: TO247
 

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MBQ60T65PES Datasheet (PDF)

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MBQ60T65PES

MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation Features General Description High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field V = 1.85V @ I = 60A CE(sat) C Stop Trench IGBT 2nd Generation Technology, which is not only E = 0.53mJ @ T = 25C off C the highest efficiency capable of switching behavio

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

Keywords - MBQ60T65PES transistor datasheet

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