All IGBT. MBQ60T65PES Datasheet

 

MBQ60T65PES IGBT. Datasheet pdf. Equivalent


   Type Designator: MBQ60T65PES
   Type: IGBT
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 428
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 100
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.85
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 54
   Collector Capacity (Cc), typ, pF: 270
   Package: TO247

 MBQ60T65PES Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MBQ60T65PES Datasheet (PDF)

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mbq60t65pes.pdf

MBQ60T65PES MBQ60T65PES

MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation Features General Description High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field V = 1.85V @ I = 60A CE(sat) C Stop Trench IGBT 2nd Generation Technology, which is not only E = 0.53mJ @ T = 25C off C the highest efficiency capable of switching behavio

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