MBQ60T65PES Datasheet and Replacement
Type Designator: MBQ60T65PES
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 428 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 54 nS
Coesⓘ - Output Capacitance, typ: 270 pF
Package: TO247
MBQ60T65PES substitution
MBQ60T65PES Datasheet (PDF)
mbq60t65pes.pdf

MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation Features General Description High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field V = 1.85V @ I = 60A CE(sat) C Stop Trench IGBT 2nd Generation Technology, which is not only E = 0.53mJ @ T = 25C off C the highest efficiency capable of switching behavio
Datasheet: FGT612 , 2PG001 , IKW30N65WR5 , MGD633 , GT20D201 , MBQ40T120FES , GT40RR21 , MBQ50T65FESC , HGTG30N60A4 , JNG25N120HS , SSG60N60N , PDMB100E6 , SL40N60FL , MBQ50T65FDSC , STGW38IH120D , FGH75T65UPD , STGB7NC60KD .
History: SL25T120FL
Keywords - MBQ60T65PES transistor datasheet
MBQ60T65PES cross reference
MBQ60T65PES equivalent finder
MBQ60T65PES lookup
MBQ60T65PES substitution
MBQ60T65PES replacement
History: SL25T120FL



LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
2sc3883 | c3306 datasheet | hy3810 | c711 transistor | k3599 transistor datasheet | 2sc1735 | transistor 2sc5200 | 2sb560 transistor