All IGBT. MBQ60T65PES Datasheet


MBQ60T65PES IGBT. Datasheet pdf. Equivalent

   Type Designator: MBQ60T65PES
   Type: IGBT
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 428
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 100
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.85
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 54
   Collector Capacity (Cc), typ, pF: 270
   Package: TO247

 MBQ60T65PES Transistor Equivalent Substitute - IGBT Cross-Reference Search


MBQ60T65PES Datasheet (PDF)

 ..1. Size:584K  magnachip


MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation Features General Description High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field V = 1.85V @ I = 60A CE(sat) C Stop Trench IGBT 2nd Generation Technology, which is not only E = 0.53mJ @ T = 25C off C the highest efficiency capable of switching behavio

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , TGPF30N43P , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .


Back to Top