MBQ60T65PES IGBT. Datasheet pdf. Equivalent
Type Designator: MBQ60T65PES
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 428 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 54 nS
Coesⓘ - Output Capacitance, typ: 270 pF
Package: TO247
MBQ60T65PES Transistor Equivalent Substitute - IGBT Cross-Reference Search
MBQ60T65PES Datasheet (PDF)
mbq60t65pes.pdf
MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation Features General Description High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field V = 1.85V @ I = 60A CE(sat) C Stop Trench IGBT 2nd Generation Technology, which is not only E = 0.53mJ @ T = 25C off C the highest efficiency capable of switching behavio
Datasheet: FGT612 , 2PG001 , IKW30N65WR5 , MGD633 , GT20D201 , MBQ40T120FES , GT40RR21 , MBQ50T65FESC , FGH30S130P , JNG25N120HS , SSG60N60N , PDMB100E6 , SL40N60FL , MBQ50T65FDSC , STGW38IH120D , FGH75T65UPD , STGB7NC60KD .
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