MBQ60T65PES Spec and Replacement, IGBT Equivalent Finder, Cross Reference

MBQ60T65PES Specs and Replacement

The MBQ60T65PES is a high-power IGBT (insulated-gate bipolar transistor), housed in a TO-247 package. Because of its power handling capabilities and high-voltage rating, MBQ60T65PES is commonly used in industrial power electronics such as inverters, uninterruptible power supplies (UPS), induction heating, welding equipment, PFC (power-factor correction) modules, motor control systems. MBQ60T65PES represents a robust, high-voltage, high-current IGBT suitable for heavy-duty switching applications requiring both efficiency and durability under thermal and electrical stress.

   Type Designator: MBQ60T65PES
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings

   Pc ⓘ - Maximum Power Dissipation: 428 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   tr ⓘ - Rise Time, typ: 54 nS
   Coesⓘ - Output Capacitance, typ: 270 pF
   Package: TO247

MBQ60T65PES Substitution

- IGBT ⓘ Cross-Reference Search

MBQ60T65PES datasheet

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mbq60t65pes.pdf pdf_icon

MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation Features General Description High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChip s Field V = 1.85V @ I = 60A CE(sat) C Stop Trench IGBT 2nd Generation Technology, which is not only E = 0.53mJ @ T = 25 C off C the highest efficiency capable of switching behavio... See More ⇒

Specs: FGT612 , 2PG001 , IKW30N65WR5 , MGD633 , GT20D201 , MBQ40T120FES , GT40RR21 , MBQ50T65FESC , FGW75N60HD , JNG25N120HS , SSG60N60N , PDMB100E6 , SL40N60FL , MBQ50T65FDSC , STGW38IH120D , FGH75T65UPD , STGB7NC60KD .