MBQ60T65PES IGBT. Datasheet pdf. Equivalent
Type Designator: MBQ60T65PES
Type: IGBT + Anti-Parallel Diode
Marking Code: 60T65PES
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 428
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 100
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.85
Maximum G-E Threshold Voltag |VGE(th)|, V: 6
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 54
Collector Capacity (Cc), typ, pF: 270
Package: TO247
MBQ60T65PES Transistor Equivalent Substitute - IGBT Cross-Reference Search
MBQ60T65PES Datasheet (PDF)
mbq60t65pes.pdf
MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation Features General Description High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field V = 1.85V @ I = 60A CE(sat) C Stop Trench IGBT 2nd Generation Technology, which is not only E = 0.53mJ @ T = 25C off C the highest efficiency capable of switching behavio
Datasheet: FGT612 , 2PG001 , IKW30N65WR5 , MGD633 , GT20D201 , MBQ40T120FES , GT40RR21 , MBQ50T65FESC , CRG60T60AK3HD , JNG25N120HS , SSG60N60N , PDMB100E6 , SL40N60FL , MBQ50T65FDSC , STGW38IH120D , FGH75T65UPD , STGB7NC60KD .
LIST
Last Update
IGBT: TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ | TT060U065FB | TT060U060EQ | TT050U065FBC | TT050U065FB | TT050K065FQ