SSG60N60N IGBT. Datasheet pdf. Equivalent
Type Designator: SSG60N60N
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 350 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 85 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.67 V @25℃
Tjⓘ - Maximum Junction Temperature: 200 ℃
trⓘ - Rise Time, typ: 49 nS
Coesⓘ - Output Capacitance, typ: 720 pF
Package: TO258
SSG60N60N Transistor Equivalent Substitute - IGBT Cross-Reference Search
SSG60N60N Datasheet (PDF)
ssg60n60.pdf
SSG60N60SERIESSOLID STATE DEVICES, INC.14830 Valley View Blvd * La Mirada, Ca 90638Phone: (562) 404-7855 * Fax: (562) 404-1773ssdi@ssdi-power.com * www.ssdi-power.com85 AMP600 VOLTSDESIGNER'S DATA SHEETFASTPart Number /Ordering Information 1/POWER IGBTSSG60N60 N _ TXScreening 2/: _ = Not ScreenedAPPLICATION NOTES:TX = TX Level 600V IGBT TechnologyTXV = TXV L
Datasheet: IKW30N65WR5 , MGD633 , GT20D201 , MBQ40T120FES , GT40RR21 , MBQ50T65FESC , MBQ60T65PES , JNG25N120HS , GT30F132 , PDMB100E6 , SL40N60FL , MBQ50T65FDSC , STGW38IH120D , FGH75T65UPD , STGB7NC60KD , STGF7NC60KD , STGP7NC60KD .
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