SSG60N60N Datasheet and Replacement
Type Designator: SSG60N60N
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 350 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 85 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.67 V @25℃
Tjⓘ - Maximum Junction Temperature: 200 ℃
trⓘ - Rise Time, typ: 49 nS
Coesⓘ - Output Capacitance, typ: 720 pF
Package: TO258
- IGBT Cross-Reference
SSG60N60N Datasheet (PDF)
ssg60n60.pdf

SSG60N60SERIESSOLID STATE DEVICES, INC.14830 Valley View Blvd * La Mirada, Ca 90638Phone: (562) 404-7855 * Fax: (562) 404-1773ssdi@ssdi-power.com * www.ssdi-power.com85 AMP600 VOLTSDESIGNER'S DATA SHEETFASTPart Number /Ordering Information 1/POWER IGBTSSG60N60 N _ TXScreening 2/: _ = Not ScreenedAPPLICATION NOTES:TX = TX Level 600V IGBT TechnologyTXV = TXV L
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: IRGC16B60KB
Keywords - SSG60N60N transistor datasheet
SSG60N60N cross reference
SSG60N60N equivalent finder
SSG60N60N lookup
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SSG60N60N replacement
History: IRGC16B60KB



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