SSG60N60N Datasheet. Specs and Replacement

Type Designator: SSG60N60N  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 350 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 85 A @25℃

Tj ⓘ - Maximum Junction Temperature: 200 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.67 V @25℃

tr ⓘ - Rise Time, typ: 49 nS

Coesⓘ - Output Capacitance, typ: 720 pF

Package: TO258

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SSG60N60N datasheet

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SSG60N60N

SSG60N60 SERIES SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone (562) 404-7855 * Fax (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 85 AMP 600 VOLTS DESIGNER'S DATA SHEET FAST Part Number /Ordering Information 1/ POWER IGBT SSG60N60 N _ TX Screening 2/ _ = Not Screened APPLICATION NOTES TX = TX Level 600V IGBT Technology TXV = TXV L... See More ⇒

Specs: IKW30N65WR5, MGD633, GT20D201, MBQ40T120FES, GT40RR21, MBQ50T65FESC, MBQ60T65PES, JNG25N120HS, IRGB20B60PD1, PDMB100E6, SL40N60FL, MBQ50T65FDSC, STGW38IH120D, FGH75T65UPD, STGB7NC60KD, STGF7NC60KD, STGP7NC60KD

Keywords - SSG60N60N transistor spec

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