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SSG60N60N Specs and Replacement


   Type Designator: SSG60N60N
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 350 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 85 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.67 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 200 ℃
   tr ⓘ - Rise Time, typ: 49 nS
   Coesⓘ - Output Capacitance, typ: 720 pF
   Package: TO258
 

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SSG60N60N specs

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SSG60N60N

SSG60N60 SERIES SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone (562) 404-7855 * Fax (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 85 AMP 600 VOLTS DESIGNER'S DATA SHEET FAST Part Number /Ordering Information 1/ POWER IGBT SSG60N60 N _ TX Screening 2/ _ = Not Screened APPLICATION NOTES TX = TX Level 600V IGBT Technology TXV = TXV L... See More ⇒

Specs: IKW30N65WR5 , MGD633 , GT20D201 , MBQ40T120FES , GT40RR21 , MBQ50T65FESC , MBQ60T65PES , JNG25N120HS , IRGB20B60PD1 , PDMB100E6 , SL40N60FL , MBQ50T65FDSC , STGW38IH120D , FGH75T65UPD , STGB7NC60KD , STGF7NC60KD , STGP7NC60KD .

Keywords - SSG60N60N transistor spec

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