All IGBT. SSG60N60N Datasheet

 

SSG60N60N Datasheet and Replacement


   Type Designator: SSG60N60N
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 350 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 85 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.67 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 200 ℃
   tr ⓘ - Rise Time, typ: 49 nS
   Coesⓘ - Output Capacitance, typ: 720 pF
   Package: TO258
 

 SSG60N60N substitution

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SSG60N60N Datasheet (PDF)

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SSG60N60N

SSG60N60SERIESSOLID STATE DEVICES, INC.14830 Valley View Blvd * La Mirada, Ca 90638Phone: (562) 404-7855 * Fax: (562) 404-1773ssdi@ssdi-power.com * www.ssdi-power.com85 AMP600 VOLTSDESIGNER'S DATA SHEETFASTPart Number /Ordering Information 1/POWER IGBTSSG60N60 N _ TXScreening 2/: _ = Not ScreenedAPPLICATION NOTES:TX = TX Level 600V IGBT TechnologyTXV = TXV L

Datasheet: IKW30N65WR5 , MGD633 , GT20D201 , MBQ40T120FES , GT40RR21 , MBQ50T65FESC , MBQ60T65PES , JNG25N120HS , IRG4PC40W , PDMB100E6 , SL40N60FL , MBQ50T65FDSC , STGW38IH120D , FGH75T65UPD , STGB7NC60KD , STGF7NC60KD , STGP7NC60KD .

History: SGF23N60UF | PS21265-AP | IRGB4610D | DF600R12IP4D | 2M410G | IRGSL4640DPBF | MBQ50T65FESC

Keywords - SSG60N60N transistor datasheet

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