PDMB100E6 Datasheet and Replacement
Type Designator: PDMB100E6
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 400 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 150 nS
Package: MODULE
- IGBT Cross-Reference
PDMB100E6 Datasheet (PDF)
pdmb100e6.pdf
QS043-402-203992/5 940.25802- 5.512 11 12 11 12 7(G2) 71 2 366(E2)(C2E1) (E2) (C1)1 2 3543-M523 23 175(E1)4(G1)4-fasten tab#1
pdmb100e6.pdf
QS043-402-203992/5 940.25802- 5.512 11 12 11 12 7(G2) 71 2 366(E2)(C2E1) (E2) (C1)1 2 3543-M523 23 175(E1)4(G1)4-fasten tab#1
Datasheet: MGD633 , GT20D201 , MBQ40T120FES , GT40RR21 , MBQ50T65FESC , MBQ60T65PES , JNG25N120HS , SSG60N60N , FGPF4533 , SL40N60FL , MBQ50T65FDSC , STGW38IH120D , FGH75T65UPD , STGB7NC60KD , STGF7NC60KD , STGP7NC60KD , AOT15B65M1 .
History: APT15GT120SRG | LGM100HF120S2F1A | NGD8205N | FGA180N33ATD | FII50-12E | NGB8207N | IRG4PF50WD
Keywords - PDMB100E6 transistor datasheet
PDMB100E6 cross reference
PDMB100E6 equivalent finder
PDMB100E6 lookup
PDMB100E6 substitution
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History: APT15GT120SRG | LGM100HF120S2F1A | NGD8205N | FGA180N33ATD | FII50-12E | NGB8207N | IRG4PF50WD
LIST
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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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