PDMB100E6 Datasheet. Specs and Replacement

Type Designator: PDMB100E6  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 400 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 150 nS

Package: MODULE

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PDMB100E6 datasheet

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 pdmb100e6.pdf pdf_icon

PDMB100E6

QS043-402-20399 2/5 94 0.25 80 2- 5.5 12 11 12 11 12 7(G2) 7 1 2 3 6 6(E2) (C2E1) (E2) (C1) 1 2 3 5 4 3-M5 23 23 17 5(E1) 4(G1) 4-fasten tab #1... See More ⇒

 ..2. Size:254K  nippon
 pdmb100e6.pdf pdf_icon

PDMB100E6

QS043-402-20399 2/5 94 0.25 80 2- 5.5 12 11 12 11 12 7(G2) 7 1 2 3 6 6(E2) (C2E1) (E2) (C1) 1 2 3 5 4 3-M5 23 23 17 5(E1) 4(G1) 4-fasten tab #1... See More ⇒

Specs: MGD633, GT20D201, MBQ40T120FES, GT40RR21, MBQ50T65FESC, MBQ60T65PES, JNG25N120HS, SSG60N60N, FGL60N100BNTD, SL40N60FL, MBQ50T65FDSC, STGW38IH120D, FGH75T65UPD, STGB7NC60KD, STGF7NC60KD, STGP7NC60KD, AOT15B65M1

Keywords - PDMB100E6 transistor spec

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