All IGBT. PDMB100E6 Datasheet

 

PDMB100E6 IGBT. Datasheet pdf. Equivalent


   Type Designator: PDMB100E6
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 400 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 150 nS
   Package: MODULE

 PDMB100E6 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

PDMB100E6 Datasheet (PDF)

 ..1. Size:243K  no
 pdmb100e6.pdf

PDMB100E6 PDMB100E6

QS043-402-203992/5 940.25802- 5.512 11 12 11 12 7(G2) 71 2 366(E2)(C2E1) (E2) (C1)1 2 3543-M523 23 175(E1)4(G1)4-fasten tab#1

 ..2. Size:254K  nippon
 pdmb100e6.pdf

PDMB100E6 PDMB100E6

QS043-402-203992/5 940.25802- 5.512 11 12 11 12 7(G2) 71 2 366(E2)(C2E1) (E2) (C1)1 2 3543-M523 23 175(E1)4(G1)4-fasten tab#1

Datasheet: MGD633 , GT20D201 , MBQ40T120FES , GT40RR21 , MBQ50T65FESC , MBQ60T65PES , JNG25N120HS , SSG60N60N , IRG4PC40W , SL40N60FL , MBQ50T65FDSC , STGW38IH120D , FGH75T65UPD , STGB7NC60KD , STGF7NC60KD , STGP7NC60KD , AOT15B65M1 .

 

 
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