All IGBT. PDMB100E6 Datasheet

 

PDMB100E6 Datasheet and Replacement


   Type Designator: PDMB100E6
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 400 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 150 nS
   Package: MODULE
 

 PDMB100E6 substitution

   - IGBT ⓘ Cross-Reference Search

 

PDMB100E6 Datasheet (PDF)

 ..1. Size:243K  no
 pdmb100e6.pdf pdf_icon

PDMB100E6

QS043-402-203992/5 940.25802- 5.512 11 12 11 12 7(G2) 71 2 366(E2)(C2E1) (E2) (C1)1 2 3543-M523 23 175(E1)4(G1)4-fasten tab#1

 ..2. Size:254K  nippon
 pdmb100e6.pdf pdf_icon

PDMB100E6

QS043-402-203992/5 940.25802- 5.512 11 12 11 12 7(G2) 71 2 366(E2)(C2E1) (E2) (C1)1 2 3543-M523 23 175(E1)4(G1)4-fasten tab#1

Datasheet: MGD633 , GT20D201 , MBQ40T120FES , GT40RR21 , MBQ50T65FESC , MBQ60T65PES , JNG25N120HS , SSG60N60N , IRGP4062D , SL40N60FL , MBQ50T65FDSC , STGW38IH120D , FGH75T65UPD , STGB7NC60KD , STGF7NC60KD , STGP7NC60KD , AOT15B65M1 .

Keywords - PDMB100E6 transistor datasheet

 PDMB100E6 cross reference
 PDMB100E6 equivalent finder
 PDMB100E6 lookup
 PDMB100E6 substitution
 PDMB100E6 replacement

 

 
Back to Top

 


 
.