PDMB100E6 IGBT. Datasheet pdf. Equivalent
Type Designator: PDMB100E6
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 400 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 150 nS
Package: MODULE
PDMB100E6 Transistor Equivalent Substitute - IGBT Cross-Reference Search
PDMB100E6 Datasheet (PDF)
pdmb100e6.pdf
QS043-402-203992/5 940.25802- 5.512 11 12 11 12 7(G2) 71 2 366(E2)(C2E1) (E2) (C1)1 2 3543-M523 23 175(E1)4(G1)4-fasten tab#1
pdmb100e6.pdf
QS043-402-203992/5 940.25802- 5.512 11 12 11 12 7(G2) 71 2 366(E2)(C2E1) (E2) (C1)1 2 3543-M523 23 175(E1)4(G1)4-fasten tab#1
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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