PDMB100E6 PDF and Equivalents Search

 

PDMB100E6 Specs and Replacement

Type Designator: PDMB100E6

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 400 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 150 nS

Package: MODULE

 PDMB100E6 Substitution

- IGBT ⓘ Cross-Reference Search

 

PDMB100E6 datasheet

 ..1. Size:243K  no
 pdmb100e6.pdf pdf_icon

PDMB100E6

QS043-402-20399 2/5 94 0.25 80 2- 5.5 12 11 12 11 12 7(G2) 7 1 2 3 6 6(E2) (C2E1) (E2) (C1) 1 2 3 5 4 3-M5 23 23 17 5(E1) 4(G1) 4-fasten tab #1... See More ⇒

 ..2. Size:254K  nippon
 pdmb100e6.pdf pdf_icon

PDMB100E6

QS043-402-20399 2/5 94 0.25 80 2- 5.5 12 11 12 11 12 7(G2) 7 1 2 3 6 6(E2) (C2E1) (E2) (C1) 1 2 3 5 4 3-M5 23 23 17 5(E1) 4(G1) 4-fasten tab #1... See More ⇒

Specs: MGD633 , GT20D201 , MBQ40T120FES , GT40RR21 , MBQ50T65FESC , MBQ60T65PES , JNG25N120HS , SSG60N60N , IRG7S313U , SL40N60FL , MBQ50T65FDSC , STGW38IH120D , FGH75T65UPD , STGB7NC60KD , STGF7NC60KD , STGP7NC60KD , AOT15B65M1 .

Keywords - PDMB100E6 transistor spec

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