All IGBT. SL40N60FL Datasheet

 

SL40N60FL Datasheet and Replacement


   Type Designator: SL40N60FL
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.15 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 76 nS
   Coesⓘ - Output Capacitance, typ: 230 pF
   Qg ⓘ - Total Gate Charge, typ: 110 nC
   Package: TO247
 

 SL40N60FL substitution

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SL40N60FL Datasheet (PDF)

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SL40N60FL

SL40N60FL 600V, 40A, Trench NPT IGBT Features 600V,40A VCE(sat)(typ.)=2.15V@VGE=15V,IC=40A High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technologyAbsolute Maximum Ratings Symbol Parameter Value Units VCES Collector-Emitter Voltage 600 V VGES Gate-Emitter Voltage + 30 V Continuous Collector Curr

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

Keywords - SL40N60FL transistor datasheet

 SL40N60FL cross reference
 SL40N60FL equivalent finder
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