All IGBT. SL40N60FL Datasheet

 

SL40N60FL Datasheet and Replacement


   Type Designator: SL40N60FL
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.15 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 76 nS
   Coesⓘ - Output Capacitance, typ: 230 pF
   Package: TO247
      - IGBT Cross-Reference

 

SL40N60FL Datasheet (PDF)

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SL40N60FL

SL40N60FL 600V, 40A, Trench NPT IGBT Features 600V,40A VCE(sat)(typ.)=2.15V@VGE=15V,IC=40A High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technologyAbsolute Maximum Ratings Symbol Parameter Value Units VCES Collector-Emitter Voltage 600 V VGES Gate-Emitter Voltage + 30 V Continuous Collector Curr

Datasheet: GT20D201 , MBQ40T120FES , GT40RR21 , MBQ50T65FESC , MBQ60T65PES , JNG25N120HS , SSG60N60N , PDMB100E6 , FGW75N60HD , MBQ50T65FDSC , STGW38IH120D , FGH75T65UPD , STGB7NC60KD , STGF7NC60KD , STGP7NC60KD , AOT15B65M1 , AOB15B65M1 .

History: CI20T120P | SG50N06S | NGD8205N | FGA180N33ATD | FII50-12E | AP30G120CSW-HF | SSG55N60M

Keywords - SL40N60FL transistor datasheet

 SL40N60FL cross reference
 SL40N60FL equivalent finder
 SL40N60FL lookup
 SL40N60FL substitution
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