SL40N60FL Datasheet. Specs and Replacement
Type Designator: SL40N60FL 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.15 V @25℃
tr ⓘ - Rise Time, typ: 76 nS
Coesⓘ - Output Capacitance, typ: 230 pF
Package: TO247
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SL40N60FL datasheet
sl40n60fl.pdf
SL40N60FL 600V, 40A, Trench NPT IGBT Features 600V,40A VCE(sat)(typ.)=2.15V@VGE=15V,IC=40A High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technology Absolute Maximum Ratings Symbol Parameter Value Units VCES Collector-Emitter Voltage 600 V VGES Gate-Emitter Voltage + 30 V Continuous Collector Curr... See More ⇒
Specs: GT20D201, MBQ40T120FES, GT40RR21, MBQ50T65FESC, MBQ60T65PES, JNG25N120HS, SSG60N60N, PDMB100E6, GT30F131, MBQ50T65FDSC, STGW38IH120D, FGH75T65UPD, STGB7NC60KD, STGF7NC60KD, STGP7NC60KD, AOT15B65M1, AOB15B65M1
Keywords - SL40N60FL transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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