1MBI50FE-060 Datasheet and Replacement
Type Designator: 1MBI50FE-060
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 220 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 600 nS
Package: MODULE
1MBI50FE-060 substitution
1MBI50FE-060 Datasheet (PDF)
1mbi50fe-060.pdf
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1mbi50u4f-120l-50.pdf
http://www.fujielectric.com/products/semiconductor/1MBI50U4F-120L-50 IGBT ModulesIGBT MODULE (U series)1200V / 50A / 1 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter DB for Motor DriveAC and DC Servo Drive Amplifier (DB)Active PFCIndustrial machinesMaximum Ratings and Characteristics Absolute Maximum Ratings
Datasheet: 1MBI400L-120 , 1MBI400N-120 , 1MBI400NA-120 , 1MBI400NN-120 , 1MBI400NP-120 , 1MBI400S-120 , 1MBI400U4-120 , 1MBI400V-120-50 , CRG15T120BNR3S , 1MBI50L-060 , 1MBI600LN-060 , 1MBI600LP-060 , 1MBI600NN-060 , 1MBI600NP-060 , 1MBI600PX-120 , 1MBI600PX-140 , 1MBI600S-120 .
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