1MBI50FE-060 Datasheet and Replacement
Type Designator: 1MBI50FE-060
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 220 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 600 nS
Package: MODULE
- IGBT Cross-Reference
1MBI50FE-060 Datasheet (PDF)
1mbi50fe-060.pdf

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1mbi50u4f-120l-50.pdf

http://www.fujielectric.com/products/semiconductor/1MBI50U4F-120L-50 IGBT ModulesIGBT MODULE (U series)1200V / 50A / 1 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter DB for Motor DriveAC and DC Servo Drive Amplifier (DB)Active PFCIndustrial machinesMaximum Ratings and Characteristics Absolute Maximum Ratings
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: F4-50R12KS4_B11 | BM63763S-VC | BM63364S-VC | BLG15T65FUL-P | MG100HF12MRC1 | NGTB20N135IHR | FD400R33KF2C
Keywords - 1MBI50FE-060 transistor datasheet
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History: F4-50R12KS4_B11 | BM63763S-VC | BM63364S-VC | BLG15T65FUL-P | MG100HF12MRC1 | NGTB20N135IHR | FD400R33KF2C



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