All IGBT. 1MBI50FE-060 Datasheet

 

1MBI50FE-060 Datasheet and Replacement


   Type Designator: 1MBI50FE-060
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 220 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 600 nS
   Package: MODULE
 

 1MBI50FE-060 substitution

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1MBI50FE-060 Datasheet (PDF)

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1MBI50FE-060

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1MBI50FE-060

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1MBI50FE-060

http://www.fujielectric.com/products/semiconductor/1MBI50U4F-120L-50 IGBT ModulesIGBT MODULE (U series)1200V / 50A / 1 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter DB for Motor DriveAC and DC Servo Drive Amplifier (DB)Active PFCIndustrial machinesMaximum Ratings and Characteristics Absolute Maximum Ratings

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: SKB04N60 | STGW60H65DFB | IXXA50N60B3 | TGAN20N135F3D | BGF15T65SD | 2MBI150PC-140 | APTGS75X170TE3

Keywords - 1MBI50FE-060 transistor datasheet

 1MBI50FE-060 cross reference
 1MBI50FE-060 equivalent finder
 1MBI50FE-060 lookup
 1MBI50FE-060 substitution
 1MBI50FE-060 replacement

 

 
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