1MBI50FE-060 PDF and Equivalents Search

 

1MBI50FE-060 Specs and Replacement

Type Designator: 1MBI50FE-060

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 220 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃

tr ⓘ - Rise Time, typ: 600 nS

Package: MODULE

 1MBI50FE-060 Substitution

- IGBT ⓘ Cross-Reference Search

 

1MBI50FE-060 datasheet

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 1mbi50fe-060.pdf pdf_icon

1MBI50FE-060

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 1mbi50l-060.pdf pdf_icon

1MBI50FE-060

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 8.2. Size:262K  fuji
 1mbi50u4f-120l-50.pdf pdf_icon

1MBI50FE-060

http //www.fujielectric.com/products/semiconductor/ 1MBI50U4F-120L-50 IGBT Modules IGBT MODULE (U series) 1200V / 50A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter DB for Motor Drive AC and DC Servo Drive Amplifier (DB) Active PFC Industrial machines Maximum Ratings and Characteristics Absolute Maximum Ratings... See More ⇒

Specs: 1MBI400L-120 , 1MBI400N-120 , 1MBI400NA-120 , 1MBI400NN-120 , 1MBI400NP-120 , 1MBI400S-120 , 1MBI400U4-120 , 1MBI400V-120-50 , FGPF4633 , 1MBI50L-060 , 1MBI600LN-060 , 1MBI600LP-060 , 1MBI600NN-060 , 1MBI600NP-060 , 1MBI600PX-120 , 1MBI600PX-140 , 1MBI600S-120 .

Keywords - 1MBI50FE-060 transistor spec

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