1MBI800U4B-120 PDF and Equivalents Search

 

1MBI800U4B-120 Specs and Replacement

Type Designator: 1MBI800U4B-120

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 4805 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 1200 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.15 V @25℃

tr ⓘ - Rise Time, typ: 100 nS

Package: MODULE

 1MBI800U4B-120 Substitution

- IGBT ⓘ Cross-Reference Search

 

1MBI800U4B-120 datasheet

 ..1. Size:1027K  fuji
 1mbi800u4b-120.pdf pdf_icon

1MBI800U4B-120

. ./ 8(017)200-56-46 www.fotorele.net e mail minsk17@tut.by IGBT MODULE 1MBI800U4B-120 MS5F 6041 S.Miyashita Feb. 15 05 Feb. 15 05 T.Miyasaka Y.Seki 1 MS5F6041 13 K.Yamada 4 4 .... See More ⇒

 6.1. Size:763K  fuji
 1mbi800ug-330.pdf pdf_icon

1MBI800U4B-120

. ./ 8(017)200-56-46 www.fotorele.net e mail minsk17@tut.by Fuji Electric Systems Co.,Ltd. Module Development Division High Power Module Gr. Target Specification (Tentative) Device name IGBT Module Type name 1MBI800UG-330 Spec. no. MT5F22460 DATE NAME APPROVED Fuji Electri... See More ⇒

Specs: 1MBI600NP-060 , 1MBI600PX-120 , 1MBI600PX-140 , 1MBI600S-120 , 1MBI600U4-120 , 1MBI600U4B-120 , 1MBI600V-120-50 , 1MBI75L-060 , GT30F131 , 1MBI800UG-330 , 1MBI900V-120-50 , 2MBI1000VXB-170E-50 , 2MBI100HB-120-50 , 2MBI100J-120 , 2MBI100N-060 , 2MBI100N-120 , 2MBI100NB-120 .

History: 2MBI150N-060 | 2MBI100NB-120

Keywords - 1MBI800U4B-120 transistor spec

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