1MBI800U4B-120 IGBT. Datasheet pdf. Equivalent
Type Designator: 1MBI800U4B-120
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 4805 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 1200 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.15 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 8.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 100 nS
Package: MODULE
1MBI800U4B-120 Transistor Equivalent Substitute - IGBT Cross-Reference Search
1MBI800U4B-120 Datasheet (PDF)
1mbi800u4b-120.pdf
. ./ 8(017)200-56-46 www.fotorele.net e:mail minsk17@tut.by IGBT MODULE 1MBI800U4B-120 MS5F 6041 S.MiyashitaFeb. 15 05Feb. 15 05 T.Miyasaka Y.Seki1MS5F604113K.Yamada 4 4 .
1mbi800ug-330.pdf
. ./ 8(017)200-56-46 www.fotorele.net e:mail minsk17@tut.byFuji Electric Systems Co.,Ltd.Module Development DivisionHigh Power Module Gr.Target Specification(Tentative)Device name: IGBT ModuleType name: 1MBI800UG-330Spec. no. : MT5F22460DATE NAME APPROVEDFuji Electri
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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