1MBI800U4B-120 Datasheet and Replacement
Type Designator: 1MBI800U4B-120
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 4805 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 1200 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.15 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 8.5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 100 nS
Package: MODULE
1MBI800U4B-120 substitution
1MBI800U4B-120 Datasheet (PDF)
1mbi800u4b-120.pdf

. ./ 8(017)200-56-46 www.fotorele.net e:mail minsk17@tut.by IGBT MODULE 1MBI800U4B-120 MS5F 6041 S.MiyashitaFeb. 15 05Feb. 15 05 T.Miyasaka Y.Seki1MS5F604113K.Yamada 4 4 .
1mbi800ug-330.pdf

. ./ 8(017)200-56-46 www.fotorele.net e:mail minsk17@tut.byFuji Electric Systems Co.,Ltd.Module Development DivisionHigh Power Module Gr.Target Specification(Tentative)Device name: IGBT ModuleType name: 1MBI800UG-330Spec. no. : MT5F22460DATE NAME APPROVEDFuji Electri
Datasheet: 1MBI600NP-060 , 1MBI600PX-120 , 1MBI600PX-140 , 1MBI600S-120 , 1MBI600U4-120 , 1MBI600U4B-120 , 1MBI600V-120-50 , 1MBI75L-060 , GT30F125 , 1MBI800UG-330 , 1MBI900V-120-50 , 2MBI1000VXB-170E-50 , 2MBI100HB-120-50 , 2MBI100J-120 , 2MBI100N-060 , 2MBI100N-120 , 2MBI100NB-120 .
History: APTGT50TDU170P
Keywords - 1MBI800U4B-120 transistor datasheet
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1MBI800U4B-120 equivalent finder
1MBI800U4B-120 lookup
1MBI800U4B-120 substitution
1MBI800U4B-120 replacement
History: APTGT50TDU170P



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