1MBI900V-120-50 PDF and Equivalents Search

 

1MBI900V-120-50 Specs and Replacement

Type Designator: 1MBI900V-120-50

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 4280 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 1080 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 320 nS

Package: MODULE

 1MBI900V-120-50 Substitution

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1MBI900V-120-50 datasheet

 0.1. Size:254K  fuji
 1mbi900v-120-50.pdf pdf_icon

1MBI900V-120-50

http //www.fujielectric.com/products/semiconductor/ 1MBI900V-120-50 IGBT Modules IGBT MODULE (V series) 1200V / 900A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Charact... See More ⇒

Specs: 1MBI600PX-140 , 1MBI600S-120 , 1MBI600U4-120 , 1MBI600U4B-120 , 1MBI600V-120-50 , 1MBI75L-060 , 1MBI800U4B-120 , 1MBI800UG-330 , CRG75T60AK3HD , 2MBI1000VXB-170E-50 , 2MBI100HB-120-50 , 2MBI100J-120 , 2MBI100N-060 , 2MBI100N-120 , 2MBI100NB-120 , 2MBI100NC-120 , 2MBI100PC-140 .

Keywords - 1MBI900V-120-50 transistor spec

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