All IGBT. 1MBI900V-120-50 Datasheet

 

1MBI900V-120-50 Datasheet and Replacement


   Type Designator: 1MBI900V-120-50
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 4280 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 1080 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 320 nS
   Package: MODULE
      - IGBT Cross-Reference

 

1MBI900V-120-50 Datasheet (PDF)

 0.1. Size:254K  fuji
 1mbi900v-120-50.pdf pdf_icon

1MBI900V-120-50

http://www.fujielectric.com/products/semiconductor/1MBI900V-120-50 IGBT ModulesIGBT MODULE (V series)1200V / 900A / 1 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyIndustrial machines, such as Welding machinesMaximum Ratings and Charact

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IXDN50N120AU1 | IRG4PC30FPBF | CM100RX-24S | BT15T60A8F | IQGB300N120I4 | JNG8T60FT1 | 2MBI900VXA-120P-50

Keywords - 1MBI900V-120-50 transistor datasheet

 1MBI900V-120-50 cross reference
 1MBI900V-120-50 equivalent finder
 1MBI900V-120-50 lookup
 1MBI900V-120-50 substitution
 1MBI900V-120-50 replacement

 

 
Back to Top

 


 
.