All IGBT. 1MBI900V-120-50 Datasheet

 

1MBI900V-120-50 Datasheet and Replacement


   Type Designator: 1MBI900V-120-50
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 4280 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 1080 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 320 nS
   Package: MODULE
 

 1MBI900V-120-50 substitution

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1MBI900V-120-50 Datasheet (PDF)

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1MBI900V-120-50

http://www.fujielectric.com/products/semiconductor/1MBI900V-120-50 IGBT ModulesIGBT MODULE (V series)1200V / 900A / 1 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyIndustrial machines, such as Welding machinesMaximum Ratings and Charact

Datasheet: 1MBI600PX-140 , 1MBI600S-120 , 1MBI600U4-120 , 1MBI600U4B-120 , 1MBI600V-120-50 , 1MBI75L-060 , 1MBI800U4B-120 , 1MBI800UG-330 , TGD30N40P , 2MBI1000VXB-170E-50 , 2MBI100HB-120-50 , 2MBI100J-120 , 2MBI100N-060 , 2MBI100N-120 , 2MBI100NB-120 , 2MBI100NC-120 , 2MBI100PC-140 .

History: SIB30N65G21F | MIXA20W1200MC | CM100RX-24S | IHW15N120R2

Keywords - 1MBI900V-120-50 transistor datasheet

 1MBI900V-120-50 cross reference
 1MBI900V-120-50 equivalent finder
 1MBI900V-120-50 lookup
 1MBI900V-120-50 substitution
 1MBI900V-120-50 replacement

 

 
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