All IGBT. 2MBI150L-120 Datasheet

 

2MBI150L-120 Datasheet and Replacement


   Type Designator: 2MBI150L-120
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 400 nS
   Package: MODULE
      - IGBT Cross-Reference

 

2MBI150L-120 Datasheet (PDF)

 ..1. Size:147K  fuji
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2MBI150L-120

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2mbi150l-060.pdf pdf_icon

2MBI150L-120

 6.1. Size:154K  fuji
2mbi150lb-060.pdf pdf_icon

2MBI150L-120

 7.1. Size:61K  fuji
2mbi150sc-120.pdf pdf_icon

2MBI150L-120

IGBT Module2MBI150SC-1201200V / 150A 2 in one-packageFeatures High speed switching Voltage drive Low inductance module structureApplications Inverter for Motor drive AC and DC Servo drive amplifier Uninterruptible power supply Industrial machines, such as Welding machinesMaximum ratings and characteristicsAbsolute maximum ratings (at Tc=25C unless other

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: 2MBI100UA-120 | SKM150GB12T4

Keywords - 2MBI150L-120 transistor datasheet

 2MBI150L-120 cross reference
 2MBI150L-120 equivalent finder
 2MBI150L-120 lookup
 2MBI150L-120 substitution
 2MBI150L-120 replacement

 

 
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