2MBI50F-120 PDF and Equivalents Search

 

2MBI50F-120 Specs and Replacement

Type Designator: 2MBI50F-120

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 360 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃

tr ⓘ - Rise Time, typ: 600 nS

Package: MODULE

 2MBI50F-120 Substitution

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2MBI50F-120 datasheet

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2MBI50F-120

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 2mbi50j-060.pdf pdf_icon

2MBI50F-120

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 8.2. Size:87K  fuji
 2mbi50l-060.pdf pdf_icon

2MBI50F-120

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Specs: 2MBI450U4J-120-50 , 2MBI450U4N-120-50 , 2MBI450U4N-170-50 , 2MBI450VE-120-50 , 2MBI450VH-120-50 , 2MBI450VJ-120-50 , 2MBI450VN-120-50 , 2MBI450VN-170-50 , IKW30N60H3 , 2MBI50J-060 , 2MBI50L-060 , 2MBI50L-120 , 2MBI50N-060 , 2MBI50N-120 , 2MBI550VJ-170-50 , 2MBI550VN-170-50 , 2MBI600NT-060 .

Keywords - 2MBI50F-120 transistor spec

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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE

 

 

 

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