2MBI50F-120 Datasheet and Replacement
Type Designator: 2MBI50F-120
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 360 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 600 nS
Package: MODULE
- IGBT Cross-Reference
2MBI50F-120 Datasheet (PDF)
2mbi50j-060.pdf

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Datasheet: 2MBI450U4J-120-50 , 2MBI450U4N-120-50 , 2MBI450U4N-170-50 , 2MBI450VE-120-50 , 2MBI450VH-120-50 , 2MBI450VJ-120-50 , 2MBI450VN-120-50 , 2MBI450VN-170-50 , TGD30N40P , 2MBI50J-060 , 2MBI50L-060 , 2MBI50L-120 , 2MBI50N-060 , 2MBI50N-120 , 2MBI550VJ-170-50 , 2MBI550VN-170-50 , 2MBI600NT-060 .
History: SG20N12T | CM200E3U-24F | SIGC03T60E | CRG05T60A44S-G | MMG400D060B6EN | IRGS4640DPBF | 7MBR25SA120-01
Keywords - 2MBI50F-120 transistor datasheet
2MBI50F-120 cross reference
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2MBI50F-120 replacement
History: SG20N12T | CM200E3U-24F | SIGC03T60E | CRG05T60A44S-G | MMG400D060B6EN | IRGS4640DPBF | 7MBR25SA120-01



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