All IGBT. 2MBI50F-120 Datasheet

 

2MBI50F-120 Datasheet and Replacement


   Type Designator: 2MBI50F-120
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 360 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 600 nS
   Package: MODULE
 

 2MBI50F-120 substitution

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2MBI50F-120 Datasheet (PDF)

 ..1. Size:51K  fuji
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2MBI50F-120

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2MBI50F-120

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2MBI50F-120

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2MBI50F-120

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Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: SG20N12T | IXSM30N60 | IGW60N60H3 | FGY100T65SCDT | 2MBI300U4E-120 | NGTB25N120S | MIXA100PF1200TMH

Keywords - 2MBI50F-120 transistor datasheet

 2MBI50F-120 cross reference
 2MBI50F-120 equivalent finder
 2MBI50F-120 lookup
 2MBI50F-120 substitution
 2MBI50F-120 replacement

 

 
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