2MBI900VXA-120P-50 Datasheet and Replacement
Type Designator: 2MBI900VXA-120P-50
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 5100 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 1200 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 400 nS
Package: MODULE
2MBI900VXA-120P-50 substitution
2MBI900VXA-120P-50 Datasheet (PDF)
2mbi900vxa-120p-50.pdf
http://www.fujielectric.com/products/semiconductor/2MBI900VXA-120P-50 IGBT ModulesIGBT MODULE (V series)1200V / 900A / 2 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyIndustrial machines, such as Welding machinesMaximum Ratings and Char
Datasheet: 2MBI75N-060 , 2MBI75N-120 , 2MBI75P-140 , 2MBI75S-120 , 2MBI75U4A-120 , 2MBI75VA-120-50 , 2MBI800U4G-120 , 2MBI800U4G-170 , GT60N321 , 4MBI300VG-120R-50 , 4MBI400VG-060R-50 , 6MBI100F-060 , 6MBI100U2B-060 , 6MBI100VA-060-50 , 6MBI100VA-120-50 , 6MBI100VB-120-50 , 6MBI100VW-060-50 .
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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