2MBI900VXA-120P-50 PDF and Equivalents Search

 

2MBI900VXA-120P-50 Specs and Replacement

Type Designator: 2MBI900VXA-120P-50

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 5100 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 1200 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃

tr ⓘ - Rise Time, typ: 400 nS

Package: MODULE

 2MBI900VXA-120P-50 Substitution

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2MBI900VXA-120P-50 datasheet

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 2mbi900vxa-120p-50.pdf pdf_icon

2MBI900VXA-120P-50

http //www.fujielectric.com/products/semiconductor/ 2MBI900VXA-120P-50 IGBT Modules IGBT MODULE (V series) 1200V / 900A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Char... See More ⇒

Specs: 2MBI75N-060, 2MBI75N-120, 2MBI75P-140, 2MBI75S-120, 2MBI75U4A-120, 2MBI75VA-120-50, 2MBI800U4G-120, 2MBI800U4G-170, IRG4PF50W, 4MBI300VG-120R-50, 4MBI400VG-060R-50, 6MBI100F-060, 6MBI100U2B-060, 6MBI100VA-060-50, 6MBI100VA-120-50, 6MBI100VB-120-50, 6MBI100VW-060-50

Keywords - 2MBI900VXA-120P-50 transistor spec

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