All IGBT. 2MBI900VXA-120P-50 Datasheet

 

2MBI900VXA-120P-50 IGBT. Datasheet pdf. Equivalent


   Type Designator: 2MBI900VXA-120P-50
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 5100 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 1200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 400 nS
   Package: MODULE

 2MBI900VXA-120P-50 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

2MBI900VXA-120P-50 Datasheet (PDF)

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 2mbi900vxa-120p-50.pdf

2MBI900VXA-120P-50 2MBI900VXA-120P-50

http://www.fujielectric.com/products/semiconductor/2MBI900VXA-120P-50 IGBT ModulesIGBT MODULE (V series)1200V / 900A / 2 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyIndustrial machines, such as Welding machinesMaximum Ratings and Char

Datasheet: 2MBI75N-060 , 2MBI75N-120 , 2MBI75P-140 , 2MBI75S-120 , 2MBI75U4A-120 , 2MBI75VA-120-50 , 2MBI800U4G-120 , 2MBI800U4G-170 , IKW40N65WR5 , 4MBI300VG-120R-50 , 4MBI400VG-060R-50 , 6MBI100F-060 , 6MBI100U2B-060 , 6MBI100VA-060-50 , 6MBI100VA-120-50 , 6MBI100VB-120-50 , 6MBI100VW-060-50 .

 

 
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