All IGBT. 2MBI900VXA-120P-50 Datasheet

 

2MBI900VXA-120P-50 Datasheet and Replacement


   Type Designator: 2MBI900VXA-120P-50
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 5100 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 1200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 400 nS
   Package: MODULE
      - IGBT Cross-Reference

 

2MBI900VXA-120P-50 Datasheet (PDF)

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2MBI900VXA-120P-50

http://www.fujielectric.com/products/semiconductor/2MBI900VXA-120P-50 IGBT ModulesIGBT MODULE (V series)1200V / 900A / 2 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyIndustrial machines, such as Welding machinesMaximum Ratings and Char

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IQGB300N120I4 | BRGH15N120D

Keywords - 2MBI900VXA-120P-50 transistor datasheet

 2MBI900VXA-120P-50 cross reference
 2MBI900VXA-120P-50 equivalent finder
 2MBI900VXA-120P-50 lookup
 2MBI900VXA-120P-50 substitution
 2MBI900VXA-120P-50 replacement

 

 
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