4MBI300VG-120R-50 PDF and Equivalents Search

 

4MBI300VG-120R-50 Specs and Replacement

Type Designator: 4MBI300VG-120R-50

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1250 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 300 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃

tr ⓘ - Rise Time, typ: 700 nS

Package: MODULE

 4MBI300VG-120R-50 Substitution

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4MBI300VG-120R-50 datasheet

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 4mbi300vg-120r-50.pdf pdf_icon

4MBI300VG-120R-50

http //www.fujielectric.com/products/semiconductor/ 4MBI300VG-120R-50 IGBT Modules IGBT MODULE (V series) 1200V / 300A / IGBT, 600V/300A/RB-IGBT, 4 in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module structure Featuring Reverse Blocking IGBT (RB-IGBT) Applications Inverter for Motor Drive Uninterruptible Power Supply Power conditione... See More ⇒

Specs: 2MBI75N-120, 2MBI75P-140, 2MBI75S-120, 2MBI75U4A-120, 2MBI75VA-120-50, 2MBI800U4G-120, 2MBI800U4G-170, 2MBI900VXA-120P-50, IRG4PC40W, 4MBI400VG-060R-50, 6MBI100F-060, 6MBI100U2B-060, 6MBI100VA-060-50, 6MBI100VA-120-50, 6MBI100VB-120-50, 6MBI100VW-060-50, 6MBI100VW-120-50

Keywords - 4MBI300VG-120R-50 transistor spec

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