All IGBT. 4MBI300VG-120R-50 Datasheet

 

4MBI300VG-120R-50 Datasheet and Replacement


   Type Designator: 4MBI300VG-120R-50
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 1250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 300 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 700 nS
   Package: MODULE
 

 4MBI300VG-120R-50 substitution

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4MBI300VG-120R-50 Datasheet (PDF)

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4MBI300VG-120R-50

http://www.fujielectric.com/products/semiconductor/4MBI300VG-120R-50 IGBT ModulesIGBT MODULE (V series)1200V / 300A / IGBT, 600V/300A/RB-IGBT, 4 in one packageFeaturesHigher EfficiencyOptimized A (T-type) -3 level circuitLow inductance module structureFeaturing Reverse Blocking IGBT (RB-IGBT)ApplicationsInverter for Motor DriveUninterruptible Power SupplyPower conditione

Datasheet: 2MBI75N-120 , 2MBI75P-140 , 2MBI75S-120 , 2MBI75U4A-120 , 2MBI75VA-120-50 , 2MBI800U4G-120 , 2MBI800U4G-170 , 2MBI900VXA-120P-50 , NGTB75N65FL2 , 4MBI400VG-060R-50 , 6MBI100F-060 , 6MBI100U2B-060 , 6MBI100VA-060-50 , 6MBI100VA-120-50 , 6MBI100VB-120-50 , 6MBI100VW-060-50 , 6MBI100VW-120-50 .

Keywords - 4MBI300VG-120R-50 transistor datasheet

 4MBI300VG-120R-50 cross reference
 4MBI300VG-120R-50 equivalent finder
 4MBI300VG-120R-50 lookup
 4MBI300VG-120R-50 substitution
 4MBI300VG-120R-50 replacement

 

 
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