4MBI400VG-060R-50 Datasheet and Replacement
Type Designator: 4MBI400VG-060R-50
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 1135 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 400 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.79 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.2 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 650 nS
Package: MODULE
- IGBT Cross-Reference
4MBI400VG-060R-50 Datasheet (PDF)
4mbi400vg-060r-50.pdf

http://www.fujielectric.com/products/semiconductor/4MBI400VG-060R-50 IGBT ModulesIGBT MODULE (V series)600V / 400A / IGBT, RB-IGBT 4 in one packageFeaturesHigher EfficiencyOptimized A (T-type) -3 level circuitLow inductance module structureFeaturing Reverse Blocking IGBT (RB-IGBT)ApplicationsInverter for Motor DriveUninterruptible Power SupplyPower conditionerMaximum R
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: MMG75J120U6HN | 2SH29
Keywords - 4MBI400VG-060R-50 transistor datasheet
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4MBI400VG-060R-50 replacement
History: MMG75J120U6HN | 2SH29



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