4MBI400VG-060R-50 IGBT. Datasheet pdf. Equivalent
Type Designator: 4MBI400VG-060R-50
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 1135 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 400 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.79 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.2 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 650 nS
Package: MODULE
4MBI400VG-060R-50 Transistor Equivalent Substitute - IGBT Cross-Reference Search
4MBI400VG-060R-50 Datasheet (PDF)
4mbi400vg-060r-50.pdf
http://www.fujielectric.com/products/semiconductor/4MBI400VG-060R-50 IGBT ModulesIGBT MODULE (V series)600V / 400A / IGBT, RB-IGBT 4 in one packageFeaturesHigher EfficiencyOptimized A (T-type) -3 level circuitLow inductance module structureFeaturing Reverse Blocking IGBT (RB-IGBT)ApplicationsInverter for Motor DriveUninterruptible Power SupplyPower conditionerMaximum R
Datasheet: 2MBI75P-140 , 2MBI75S-120 , 2MBI75U4A-120 , 2MBI75VA-120-50 , 2MBI800U4G-120 , 2MBI800U4G-170 , 2MBI900VXA-120P-50 , 4MBI300VG-120R-50 , IHW20N120R2 , 6MBI100F-060 , 6MBI100U2B-060 , 6MBI100VA-060-50 , 6MBI100VA-120-50 , 6MBI100VB-120-50 , 6MBI100VW-060-50 , 6MBI100VW-120-50 , 6MBI100VX-120-50 .
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