CM100TX-24S Datasheet and Replacement
Type Designator: CM100TX-24S
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 750 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.6 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 200 nS
Coesⓘ - Output Capacitance, typ: 2000 pF
Qgⓘ - Total Gate Charge, typ: 233 nC
Package: MODULE
- IGBT Cross-Reference
CM100TX-24S Datasheet (PDF)
Datasheet: CM100RL-24NF , CM100RX-12A , CM100RX-24S , CM100RX-24S1 , CM100TL-12NF , CM100TL-24NF , CM100TU-12F , CM100TU-24F , IRGP4086 , CM100TX-24S1 , CM10MD-24H , CM1200DB-34N , CM1200DC-34N , CM1200E4C-34N , CM1200HA-34H , CM1200HA-50H , CM1200HA-66H .
History: IXGH30N120C3H1
Keywords - CM100TX-24S transistor datasheet
CM100TX-24S cross reference
CM100TX-24S equivalent finder
CM100TX-24S lookup
CM100TX-24S substitution
CM100TX-24S replacement
History: IXGH30N120C3H1
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