CM1400DU-24NF Datasheet and Replacement
Type Designator: CM1400DU-24NF
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 3900 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 1400 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 300 nS
Coesⓘ - Output Capacitance, typ: 25000 pF
Qgⓘ - Total Gate Charge, typ: 7200 nC
Package: MODULE
- IGBT Cross-Reference
CM1400DU-24NF Datasheet (PDF)
cm1400du-24nf.pdf

MITSUBISHI IGBT MODULESCM1400DU-24NFHIGH POWER SWITCHING USECM1400DU-24NF IC ................................................................ 1400A VCES ......................................................... 1200V Insulated Type 2-elements in a packAPPLICATIONUPS & General purpose inverters, etcOUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mmA,B HO
cm140n04.pdf

RCM140N04 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 40V N-Channel Trench-MOS RoHS 1 USP 2 3
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
Keywords - CM1400DU-24NF transistor datasheet
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