CM1400DU-24NF IGBT. Datasheet pdf. Equivalent

   Type Designator: CM1400DU-24NF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 3900 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 1400 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 300 nS
   Coesⓘ - Output Capacitance, typ: 25000 pF
   Qgⓘ - Total Gate Charge, typ: 7200 nC
   Package: MODULE

CM1400DU-24NF Transistor Equivalent Substitute - IGBT Cross-Reference Search

CM1400DU-24NF Datasheet (PDF)

..1. Size:107K 1
cm1400du-24nf.pdf

MITSUBISHI IGBT MODULESCM1400DU-24NFHIGH POWER SWITCHING USECM1400DU-24NF IC ................................................................ 1400A VCES ......................................................... 1200V Insulated Type 2-elements in a packAPPLICATIONUPS & General purpose inverters, etcOUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mmA,B HO

6.1. Size:496K 1
cm1400duc-24s.pdf