All IGBT. CM1400DUC-24S Datasheet

 

CM1400DUC-24S Datasheet and Replacement


   Type Designator: CM1400DUC-24S
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 9375 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 1400 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.6 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 250 nS
   Coesⓘ - Output Capacitance, typ: 30000 pF
   Qg ⓘ - Total Gate Charge, typ: 3500 nC
   Package: MODULE
 

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CM1400DUC-24S Datasheet (PDF)

 ..1. Size:496K  1
cm1400duc-24s.pdf pdf_icon

CM1400DUC-24S

 6.1. Size:107K  1
cm1400du-24nf.pdf pdf_icon

CM1400DUC-24S

MITSUBISHI IGBT MODULESCM1400DU-24NFHIGH POWER SWITCHING USECM1400DU-24NF IC ................................................................ 1400A VCES ......................................................... 1200V Insulated Type 2-elements in a packAPPLICATIONUPS & General purpose inverters, etcOUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mmA,B HO

 9.1. Size:123K  jdsemi
cm140n04.pdf pdf_icon

CM1400DUC-24S

RCM140N04 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 40V N-Channel Trench-MOS RoHS 1 USP 2 3

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: CM1600HC-34H

Keywords - CM1400DUC-24S transistor datasheet

 CM1400DUC-24S cross reference
 CM1400DUC-24S equivalent finder
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 CM1400DUC-24S substitution
 CM1400DUC-24S replacement

 

 
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