CM2400HCB-34N Datasheet. Specs and Replacement

Type Designator: CM2400HCB-34N  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 15600 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 2400 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 600 nS

Coesⓘ - Output Capacitance, typ: 21600 pF

Package: MODULE

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CM2400HCB-34N datasheet

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CM2400HCB-34N

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CM2400HCB-34N

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CM2400HCB-34N

MITSUBISHI HVIGBT MODULES CM2400HC-34H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM2400HC-34H IC ................................................................ 2400A VCES ....................................................... 1700V Insulated Type 1-element in a Pack AISiC Baseplate Soft Reverse Recover... See More ⇒

Specs: CM200RXL-24S, CM200TL-12NF, CM200TL-24NF, CM200TU-12F, CM20MD-12H, CM225DX-24S1, CM2400HC-34H, CM2400HC-34N, FGH60N60SMD, CM2500DY-24S, CM25MD-24H, CM300DU-12F, CM300DU-12NFH, CM300DU-24F, CM300DU-24NFH, CM300DX-12A, CM300DX-24S

Keywords - CM2400HCB-34N transistor spec

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