CM2400HCB-34N PDF Specs and Replacement
Type Designator: CM2400HCB-34N
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 15600 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 2400 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
tr ⓘ - Rise Time, typ: 600 nS
Coesⓘ - Output Capacitance, typ: 21600 pF
Package: MODULE
CM2400HCB-34N Substitution
CM2400HCB-34N PDF specs
cm2400hc-34h.pdf
MITSUBISHI HVIGBT MODULES CM2400HC-34H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM2400HC-34H IC ................................................................ 2400A VCES ....................................................... 1700V Insulated Type 1-element in a Pack AISiC Baseplate Soft Reverse Recover... See More ⇒
Specs: CM200RXL-24S , CM200TL-12NF , CM200TL-24NF , CM200TU-12F , CM20MD-12H , CM225DX-24S1 , CM2400HC-34H , CM2400HC-34N , FGH60N60SMD , CM2500DY-24S , CM25MD-24H , CM300DU-12F , CM300DU-12NFH , CM300DU-24F , CM300DU-24NFH , CM300DX-12A , CM300DX-24S .
History: CM2400HC-34H
Keywords - CM2400HCB-34N transistor spec
CM2400HCB-34N cross reference
CM2400HCB-34N equivalent finder
CM2400HCB-34N lookup
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History: CM2400HC-34H
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