CM25MD-24H IGBT. Datasheet pdf. Equivalent
Type Designator: CM25MD-24H
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 104 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 25 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 200 nS
Coesⓘ - Output Capacitance, typ: 3800 pF
Qgⓘ - Total Gate Charge, typ: 125 nC
Package: MODULE
CM25MD-24H Transistor Equivalent Substitute - IGBT Cross-Reference Search
CM25MD-24H Datasheet (PDF)
cm25md-24h.pdf
MITSUBISHI IGBT MODULESCM25MD-24HMEDIUM POWER SWITCHING USEINSULATED TYPECM25MD-24HIC ..................................................................... 25AVCES ......................................................... 1200VInsulated TypeCIB Module3 Inverter+3 Converter+BrakeUL RecognizedYellow Card No. E80276 (N)File No. E80271APPLICATIONAC & DC mot
Datasheet: CM200TL-24NF , CM200TU-12F , CM20MD-12H , CM225DX-24S1 , CM2400HC-34H , CM2400HC-34N , CM2400HCB-34N , CM2500DY-24S , MBQ60T65PES , CM300DU-12F , CM300DU-12NFH , CM300DU-24F , CM300DU-24NFH , CM300DX-12A , CM300DX-24S , CM300DX-24S1 , CM300DX-34SA .
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