CM30MD-12H IGBT. Datasheet pdf. Equivalent
Type Designator: CM30MD-12H
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 66 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 30 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 300 nS
Coesⓘ - Output Capacitance, typ: 2400 pF
Package: MODULE
CM30MD-12H Transistor Equivalent Substitute - IGBT Cross-Reference Search
CM30MD-12H Datasheet (PDF)
cm30md-12h.pdf
MITSUBISHI IGBT MODULESCM30MD-12HMEDIUM POWER SWITCHING USEINSULATED TYPECM30MD-12HIC ..................................................................... 30AVCES ............................................................600VInsulated TypeCIB Module3 Inverter+3 Converter+BrakeUL RecognizedYellow Card No. E80276 (N)File No. E80271APPLICATIONAC & DC mo
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
LIST
Last Update
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2