CM600DX-24S1 Datasheet. Specs and Replacement
Type Designator: CM600DX-24S1 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 3330 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 600 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
tr ⓘ - Rise Time, typ: 200 nS
Coesⓘ - Output Capacitance, typ: 10000 pF
Package: MODULE
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CM600DX-24S1 Substitution
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CM600DX-24S1 datasheet
cm600dy-34h.pdf
MITSUBISHI HVIGBT MODULES CM600DY-34H HIGH POWER SWITCHING USE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM600DY-34H IC...................................................................600A VCES ....................................................... 1700V Insulated Type 2-elements in a pack APPLICATION Inverters, Converters, DC choppers, Ind... See More ⇒
Specs: CM50TF-12H, CM50TF-24H, CM50TL-24NF, CM50TU-24F, CM50YE13-12H, CM600DU-24F, CM600DU-24NFH, CM600DU-5F, YGP20N65T2, CM600DXL-24S, CM600DXL-34SA, CM600DY-12NF, CM600DY-24A, CM600DY-24S, CM600DY-34H, CM600E2Y-34H, CM600HA-5F
Keywords - CM600DX-24S1 transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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