CM600DY-24S IGBT. Datasheet pdf. Equivalent
Type Designator: CM600DY-24S
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 4050 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 600 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.6 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 200 nS
Coesⓘ - Output Capacitance, typ: 12000 pF
Qgⓘ - Total Gate Charge, typ: 1400 nC
Package: MODULE
CM600DY-24S Transistor Equivalent Substitute - IGBT Cross-Reference Search
CM600DY-24S Datasheet (PDF)
cm600dy-34h.pdf
MITSUBISHI HVIGBT MODULESCM600DY-34HHIGH POWER SWITCHING USEHVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM600DY-34H IC...................................................................600A VCES ....................................................... 1700V Insulated Type 2-elements in a packAPPLICATIONInverters, Converters, DC choppers, Ind
Datasheet: CM600DU-24F , CM600DU-24NFH , CM600DU-5F , CM600DX-24S1 , CM600DXL-24S , CM600DXL-34SA , CM600DY-12NF , CM600DY-24A , XNF15N60T , CM600DY-34H , CM600E2Y-34H , CM600HA-5F , CM600HB-90H , CM600HG-130H , CM600HG-90H , CM600HN-5F , CM600HU-12F .
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IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2