CM600DY-24S Datasheet. Specs and Replacement

Type Designator: CM600DY-24S  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 4050 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 600 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃

tr ⓘ - Rise Time, typ: 200 nS

Coesⓘ - Output Capacitance, typ: 12000 pF

Package: MODULE

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CM600DY-24S datasheet

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CM600DY-24S

MITSUBISHI HVIGBT MODULES CM600DY-34H HIGH POWER SWITCHING USE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM600DY-34H IC...................................................................600A VCES ....................................................... 1700V Insulated Type 2-elements in a pack APPLICATION Inverters, Converters, DC choppers, Ind... See More ⇒

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CM600DY-24S

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Specs: CM600DU-24F, CM600DU-24NFH, CM600DU-5F, CM600DX-24S1, CM600DXL-24S, CM600DXL-34SA, CM600DY-12NF, CM600DY-24A, IKW30N60H3, CM600DY-34H, CM600E2Y-34H, CM600HA-5F, CM600HB-90H, CM600HG-130H, CM600HG-90H, CM600HN-5F, CM600HU-12F

Keywords - CM600DY-24S transistor spec

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