CM900DUC-24S IGBT. Datasheet pdf. Equivalent
Type Designator: CM900DUC-24S
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 6520 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 900 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.6 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 250 nS
Coesⓘ - Output Capacitance, typ: 18000 pF
Qgⓘ - Total Gate Charge, typ: 2300 nC
Package: MODULE
CM900DUC-24S Transistor Equivalent Substitute - IGBT Cross-Reference Search
CM900DUC-24S Datasheet (PDF)
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