CM900DUC-24S - параметры транзистора, его аналоги, Даташиты

CM900DUC-24S Datasheet (PDF)

..1. Size:516K 1
cm900duc-24s.pdf pdf_icon

9.1. Size:203K 1
cm900hg-90h.pdf pdf_icon

MITSUBISHI HVIGBT MODULESCM900HG-90HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM900HG-90H IC ..................................................................900 A VCES ...................................................... 4500 V High Insulated Type 1-element in a Pack AISiC BaseplateAP

9.2. Size:64K 1
cm900hb-90h.pdf pdf_icon

MITSUBISHI HVIGBT MODULESCM900HB-90HHIGH POWER SWITCHING USE2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM900HB-90H IC...................................................................900A VCES ....................................................... 4500V Insulated Type 1-element in a packAPPLICATIONInverters, Converters, DC ch

9.3. Size:86K 1
cm900hc-90h.pdf pdf_icon

MITSUBISHI HVIGBT MODULESCM900HC-90HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM900HC-90H IC ..................................................................900 A VCES ...................................................... 4500 V Insulated Type 1-element in a Pack AISiC BaseplateAPPLICA

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