All IGBT. CMH1200DC-34S Datasheet

 

CMH1200DC-34S Datasheet and Replacement


   Type Designator: CMH1200DC-34S
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 6750 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 1200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 140 nS
   Coesⓘ - Output Capacitance, typ: 8000 pF
   Package: MODULE
 

 CMH1200DC-34S substitution

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CMH1200DC-34S Datasheet (PDF)

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 cmh1200dc-34s.pdf pdf_icon

CMH1200DC-34S

CMH1200DC-34S HIGH POWER SWITCHING USE INSULATED TYPE SiC Hybrid HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module CMH1200DC-34S I 1200AC V 1700VCES

 8.1. Size:564K  dacosemi
 dacmh120n1200.pdf pdf_icon

CMH1200DC-34S

DACMH120N1200DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 1200V RDS(ON)

Datasheet: CM800HA-66H , CM800HB-50H , CM800HB-66H , CM800HC-66H , CM900DUC-24S , CM900HB-90H , CM900HC-90H , CM900HG-90H , FGH40N60SFD , DF1000R17IE4 , DF1000R17IE4D_B2 , DF120R12W2H3_B27 , DF1400R12IP4D , DF150R12RT4 , DF160R12W2H3_B11 , DF160R12W2H3F_B11 , DF200R12KE3 .

History: 6MBP200VDA060-50

Keywords - CMH1200DC-34S transistor datasheet

 CMH1200DC-34S cross reference
 CMH1200DC-34S equivalent finder
 CMH1200DC-34S lookup
 CMH1200DC-34S substitution
 CMH1200DC-34S replacement

 

 
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