CMH1200DC-34S Specs and Replacement
Type Designator: CMH1200DC-34S
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 6750 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 1200 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
tr ⓘ - Rise Time, typ: 140 nS
Coesⓘ - Output Capacitance, typ: 8000 pF
Qg ⓘ - Total Gate Charge, typ: 12000 nC
Package: MODULE CMH1200DC-34S Substitution - IGBT ⓘ Cross-Reference Search
CMH1200DC-34S datasheet
dacmh120n1200.pdf
DACMH120N1200 DACO SEMICONDUCTOR CO., LTD. Silicon Carbide Enhancement Mode MOSFET Preliminary HB-9434 Features VDSS = 1200V RDS(ON) ... See More ⇒
Specs: CM800HA-66H , CM800HB-50H , CM800HB-66H , CM800HC-66H , CM900DUC-24S , CM900HB-90H , CM900HC-90H , CM900HG-90H , GT30J124 , DF1000R17IE4 , DF1000R17IE4D_B2 , DF120R12W2H3_B27 , DF1400R12IP4D , DF150R12RT4 , DF160R12W2H3_B11 , DF160R12W2H3F_B11 , DF200R12KE3 .
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