CMH1200DC-34S IGBT. Datasheet pdf. Equivalent
Type Designator: CMH1200DC-34S
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 6750 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 1200 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 140 nS
Coesⓘ - Output Capacitance, typ: 8000 pF
Package: MODULE
CMH1200DC-34S Transistor Equivalent Substitute - IGBT Cross-Reference Search
CMH1200DC-34S Datasheet (PDF)
cmh1200dc-34s.pdf
CMH1200DC-34S HIGH POWER SWITCHING USE INSULATED TYPE SiC Hybrid HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module CMH1200DC-34S I 1200AC V 1700VCES
dacmh120n1200.pdf
DACMH120N1200DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 1200V RDS(ON)
Datasheet: CM800HA-66H , CM800HB-50H , CM800HB-66H , CM800HC-66H , CM900DUC-24S , CM900HB-90H , CM900HC-90H , CM900HG-90H , FGH40N60SFD , DF1000R17IE4 , DF1000R17IE4D_B2 , DF120R12W2H3_B27 , DF1400R12IP4D , DF150R12RT4 , DF160R12W2H3_B11 , DF160R12W2H3F_B11 , DF200R12KE3 .
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