CMH1200DC-34S Datasheet and Replacement
Type Designator: CMH1200DC-34S
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 6750 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 1200 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 140 nS
Coesⓘ - Output Capacitance, typ: 8000 pF
Package: MODULE
- IGBT Cross-Reference
CMH1200DC-34S Datasheet (PDF)
cmh1200dc-34s.pdf

CMH1200DC-34S HIGH POWER SWITCHING USE INSULATED TYPE SiC Hybrid HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module CMH1200DC-34S I 1200AC V 1700VCES
dacmh120n1200.pdf

DACMH120N1200DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 1200V RDS(ON)
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: APTGT25A120D1 | CM1400DU-24NF | TT050K065FQ | CRG15T120BK3SD | F4-75R12MS4 | IXGP20N120 | JNG75T65HYU2
Keywords - CMH1200DC-34S transistor datasheet
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History: APTGT25A120D1 | CM1400DU-24NF | TT050K065FQ | CRG15T120BK3SD | F4-75R12MS4 | IXGP20N120 | JNG75T65HYU2



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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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