DF120R12W2H3_B27 Datasheet and Replacement

   Type Designator: DF120R12W2H3_B27
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 180 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   trⓘ - Rise Time, typ: 20 nS
   Qgⓘ - Total Gate Charge, typ: 185 nC
   Package: MODULE
      - IGBT Cross-Reference