DF120R12W2H3_B27 IGBT. Datasheet pdf. Equivalent
Type Designator: DF120R12W2H3_B27
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 180 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
trⓘ - Rise Time, typ: 20 nS
Package: MODULE
DF120R12W2H3_B27 Transistor Equivalent Substitute - IGBT Cross-Reference Search
DF120R12W2H3_B27 Datasheet (PDF)
df120r12w2h3 b27.pdf
/ Technical InformationIGBT-DF120R12W2H3_B27IGBT-modules / Preliminary DataV = 1200VCESI = 40A / I = 80AC nom CRM Typical Applications Solar Applications Electrical Features IGBT H3 High Speed IGBT H3 Low Switching Losses Mechanical Featur
Datasheet: CM800HC-66H , CM900DUC-24S , CM900HB-90H , CM900HC-90H , CM900HG-90H , CMH1200DC-34S , DF1000R17IE4 , DF1000R17IE4D_B2 , MBQ60T65PES , DF1400R12IP4D , DF150R12RT4 , DF160R12W2H3_B11 , DF160R12W2H3F_B11 , DF200R12KE3 , DF200R12PT4_B6 , DF200R12W1H3_B27 , DF300R07PE4_B6 .
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