DF120R12W2H3_B27 Datasheet. Specs and Replacement

Type Designator: DF120R12W2H3_B27  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 180 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃

tr ⓘ - Rise Time, typ: 20 nS

Package: MODULE

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DF120R12W2H3_B27 datasheet

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DF120R12W2H3_B27

/ Technical Information IGBT- DF120R12W2H3_B27 IGBT-modules / Preliminary Data V = 1200V CES I = 40A / I = 80A C nom CRM Typical Applications Solar Applications Electrical Features IGBT H3 High Speed IGBT H3 Low Switching Losses Mechanical Featur... See More ⇒

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DF120R12W2H3_B27

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DF120R12W2H3_B27

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Specs: CM800HC-66H, CM900DUC-24S, CM900HB-90H, CM900HC-90H, CM900HG-90H, CMH1200DC-34S, DF1000R17IE4, DF1000R17IE4D_B2, FGH40N60SFD, DF1400R12IP4D, DF150R12RT4, DF160R12W2H3_B11, DF160R12W2H3F_B11, DF200R12KE3, DF200R12PT4_B6, DF200R12W1H3_B27, DF300R07PE4_B6

Keywords - DF120R12W2H3_B27 transistor spec

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