DF120R12W2H3_B27 PDF and Equivalents Search

 

DF120R12W2H3_B27 PDF Specs and Replacement


   Type Designator: DF120R12W2H3_B27
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 180 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   tr ⓘ - Rise Time, typ: 20 nS
   Qg ⓘ - Total Gate Charge, typ: 185 nC
   Package: MODULE
 

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DF120R12W2H3_B27 PDF specs

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DF120R12W2H3_B27

/ Technical Information IGBT- DF120R12W2H3_B27 IGBT-modules / Preliminary Data V = 1200V CES I = 40A / I = 80A C nom CRM Typical Applications Solar Applications Electrical Features IGBT H3 High Speed IGBT H3 Low Switching Losses Mechanical Featur... See More ⇒

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DF120R12W2H3_B27

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 9.2. Size:164K  solitron
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DF120R12W2H3_B27

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Specs: CM800HC-66H , CM900DUC-24S , CM900HB-90H , CM900HC-90H , CM900HG-90H , CMH1200DC-34S , DF1000R17IE4 , DF1000R17IE4D_B2 , FGD4536 , DF1400R12IP4D , DF150R12RT4 , DF160R12W2H3_B11 , DF160R12W2H3F_B11 , DF200R12KE3 , DF200R12PT4_B6 , DF200R12W1H3_B27 , DF300R07PE4_B6 .

Keywords - DF120R12W2H3_B27 transistor spec

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