DF1400R12IP4D Datasheet and Replacement
Type Designator: DF1400R12IP4D
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 7700 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 1400 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
trⓘ - Rise Time, typ: 120 nS
Package: MODULE
- IGBT Cross-Reference
DF1400R12IP4D Datasheet (PDF)
df1400r12ip4d.pdf

/ Technical InformationIGBT-DF1400R12IP4DIGBT-modulesPrimePACK3 /IGBT4PrimePACK3 module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode / Preliminary DataV = 1200VCESI = 1400A / I = 2800AC nom CRM Typical Applications
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: APT30GN60SG | 7MBP100VDA060-50 | 6MBI150VB-060-50 | SGR6N60UF | STGBL6NC60DI | MMIX4B22N300 | MITB10WB1200TMH
Keywords - DF1400R12IP4D transistor datasheet
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History: APT30GN60SG | 7MBP100VDA060-50 | 6MBI150VB-060-50 | SGR6N60UF | STGBL6NC60DI | MMIX4B22N300 | MITB10WB1200TMH



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