DF1400R12IP4D PDF and Equivalents Search

 

DF1400R12IP4D Specs and Replacement

Type Designator: DF1400R12IP4D

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 7700 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 1400 A @25℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃

tr ⓘ - Rise Time, typ: 120 nS

Package: MODULE

 DF1400R12IP4D Substitution

- IGBT ⓘ Cross-Reference Search

 

DF1400R12IP4D datasheet

 ..1. Size:902K  infineon
 df1400r12ip4d.pdf pdf_icon

DF1400R12IP4D

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 9.1. Size:70K  solitron
 sdf140.pdf pdf_icon

DF1400R12IP4D

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Specs: CM900DUC-24S , CM900HB-90H , CM900HC-90H , CM900HG-90H , CMH1200DC-34S , DF1000R17IE4 , DF1000R17IE4D_B2 , DF120R12W2H3_B27 , FGPF4536 , DF150R12RT4 , DF160R12W2H3_B11 , DF160R12W2H3F_B11 , DF200R12KE3 , DF200R12PT4_B6 , DF200R12W1H3_B27 , DF300R07PE4_B6 , DF300R12KE3 .

History: MMG100WD120XT6TC

Keywords - DF1400R12IP4D transistor spec

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