All IGBT. DF1400R12IP4D Datasheet

 

DF1400R12IP4D Datasheet and Replacement


   Type Designator: DF1400R12IP4D
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 7700 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 1400 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
   tr ⓘ - Rise Time, typ: 120 nS
   Package: MODULE
 

 DF1400R12IP4D substitution

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DF1400R12IP4D Datasheet (PDF)

 ..1. Size:902K  infineon
 df1400r12ip4d.pdf pdf_icon

DF1400R12IP4D

/ Technical InformationIGBT-DF1400R12IP4DIGBT-modulesPrimePACK3 /IGBT4PrimePACK3 module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode / Preliminary DataV = 1200VCESI = 1400A / I = 2800AC nom CRM Typical Applications

 9.1. Size:70K  solitron
 sdf140.pdf pdf_icon

DF1400R12IP4D

Datasheet: CM900DUC-24S , CM900HB-90H , CM900HC-90H , CM900HG-90H , CMH1200DC-34S , DF1000R17IE4 , DF1000R17IE4D_B2 , DF120R12W2H3_B27 , RJP30H2A , DF150R12RT4 , DF160R12W2H3_B11 , DF160R12W2H3F_B11 , DF200R12KE3 , DF200R12PT4_B6 , DF200R12W1H3_B27 , DF300R07PE4_B6 , DF300R12KE3 .

Keywords - DF1400R12IP4D transistor datasheet

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