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DF150R12RT4 Specs and Replacement


   Type Designator: DF150R12RT4
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 790 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
   tr ⓘ - Rise Time, typ: 20 nS
   Package: MODULE
 

 DF150R12RT4 Substitution

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DF150R12RT4 specs

 ..1. Size:643K  infineon
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DF150R12RT4

Technische Information / Technical Information IGBT-Module DF150R12RT4 IGBT-modules 34mm Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode 34mm module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode Vorl ufige Daten / Preliminary Data V = 1200V CES I = 150A / I = 300A C nom CRM Typische Anwendungen Typical Applications Anwendungen mit hohen Schaltfreque... See More ⇒

 9.1. Size:154K  solitron
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DF150R12RT4

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 9.2. Size:155K  solitron
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DF150R12RT4

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Specs: CM900HB-90H , CM900HC-90H , CM900HG-90H , CMH1200DC-34S , DF1000R17IE4 , DF1000R17IE4D_B2 , DF120R12W2H3_B27 , DF1400R12IP4D , IXGH60N60 , DF160R12W2H3_B11 , DF160R12W2H3F_B11 , DF200R12KE3 , DF200R12PT4_B6 , DF200R12W1H3_B27 , DF300R07PE4_B6 , DF300R12KE3 , DF400R12KE3 .

History: NGB8207AB

Keywords - DF150R12RT4 transistor spec

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