DF150R12RT4 IGBT. Datasheet pdf. Equivalent
Type Designator: DF150R12RT4
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 790 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
trⓘ - Rise Time, typ: 20 nS
Package: MODULE
DF150R12RT4 Transistor Equivalent Substitute - IGBT Cross-Reference Search
DF150R12RT4 Datasheet (PDF)
df150r12rt4.pdf
Technische Information / Technical InformationIGBT-ModuleDF150R12RT4IGBT-modules34mm Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode34mm module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diodeVorlufige Daten / Preliminary DataV = 1200VCESI = 150A / I = 300AC nom CRMTypische Anwendungen Typical Applications Anwendungen mit hohen Schaltfreque
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
LIST
Last Update
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2