DF150R12RT4 Datasheet. Specs and Replacement
Type Designator: DF150R12RT4 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 790 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 150 A @25℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
Package: MODULE
📄📄 Copy
DF150R12RT4 Substitution
- IGBTⓘ Cross-Reference Search
DF150R12RT4 datasheet
df150r12rt4.pdf
Technische Information / Technical Information IGBT-Module DF150R12RT4 IGBT-modules 34mm Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode 34mm module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode Vorl ufige Daten / Preliminary Data V = 1200V CES I = 150A / I = 300A C nom CRM Typische Anwendungen Typical Applications Anwendungen mit hohen Schaltfreque... See More ⇒
Specs: CM900HB-90H, CM900HC-90H, CM900HG-90H, CMH1200DC-34S, DF1000R17IE4, DF1000R17IE4D_B2, DF120R12W2H3_B27, DF1400R12IP4D, FGD4536, DF160R12W2H3_B11, DF160R12W2H3F_B11, DF200R12KE3, DF200R12PT4_B6, DF200R12W1H3_B27, DF300R07PE4_B6, DF300R12KE3, DF400R12KE3
Keywords - DF150R12RT4 transistor spec
DF150R12RT4 cross reference
DF150R12RT4 equivalent finder
DF150R12RT4 lookup
DF150R12RT4 substitution
DF150R12RT4 replacement
🌐 : EN ES РУ
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
Popular searches
transistor bc547 datasheet | bc109c | d331 transistor | irfbc40 | mp16b transistor | 2sa934 | 2sd118 | 2n3403



