DF160R12W2H3_B11 Specs and Replacement
Type Designator: DF160R12W2H3_B11
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 190 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
tr ⓘ - Rise Time, typ: 10 nS
Package: MODULE
DF160R12W2H3_B11 Substitution
DF160R12W2H3_B11 specs
df160r12w2h3 b11.pdf
/ Technical Information IGBT- DF160R12W2H3_B11 IGBT-modules / Preliminary Data V = 1200V CES I = 160A / I = 320A C nom CRM Typical Applications Solar Applications UPS UPS Systems Electrical Features IGB... See More ⇒
Specs: CM900HC-90H , CM900HG-90H , CMH1200DC-34S , DF1000R17IE4 , DF1000R17IE4D_B2 , DF120R12W2H3_B27 , DF1400R12IP4D , DF150R12RT4 , GT30J127 , DF160R12W2H3F_B11 , DF200R12KE3 , DF200R12PT4_B6 , DF200R12W1H3_B27 , DF300R07PE4_B6 , DF300R12KE3 , DF400R12KE3 , DF600R12IP4D .
Keywords - DF160R12W2H3_B11 transistor spec
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