All IGBT. DF160R12W2H3_B11 Datasheet

 

DF160R12W2H3_B11 IGBT. Datasheet pdf. Equivalent


   Type Designator: DF160R12W2H3_B11
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 190 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   trⓘ - Rise Time, typ: 10 nS
   Package: MODULE

 DF160R12W2H3_B11 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

DF160R12W2H3_B11 Datasheet (PDF)

 0.1. Size:991K  infineon
df160r12w2h3 b11.pdf

DF160R12W2H3_B11
DF160R12W2H3_B11

/ Technical InformationIGBT-DF160R12W2H3_B11IGBT-modules / Preliminary DataV = 1200VCESI = 160A / I = 320AC nom CRM Typical Applications Solar Applications UPS UPS Systems Electrical Features IGB

 2.1. Size:987K  infineon
df160r12w2h3f b11.pdf

DF160R12W2H3_B11
DF160R12W2H3_B11

/ Technical InformationIGBT-DF160R12W2H3F_B11IGBT-modules / Preliminary DataV = 1200VCESI = 160A / I = 320AC nom CRM Typical Applications Solar Applications Electrical Features IGBT H3 High Speed IGBT H3 Low Switching Losses thinQ

Datasheet: CM900HC-90H , CM900HG-90H , CMH1200DC-34S , DF1000R17IE4 , DF1000R17IE4D_B2 , DF120R12W2H3_B27 , DF1400R12IP4D , DF150R12RT4 , SGT50T65FD1PT , DF160R12W2H3F_B11 , DF200R12KE3 , DF200R12PT4_B6 , DF200R12W1H3_B27 , DF300R07PE4_B6 , DF300R12KE3 , DF400R12KE3 , DF600R12IP4D .

 

 
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