DF400R12KE3 IGBT. Datasheet pdf. Equivalent
Type Designator: DF400R12KE3
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 2000 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 580 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 125 ℃
trⓘ - Rise Time, typ: 90 nS
Qgⓘ - Total Gate Charge, typ: 3700 nC
Package: MODULE
DF400R12KE3 Transistor Equivalent Substitute - IGBT Cross-Reference Search
DF400R12KE3 Datasheet (PDF)
df400r12ke3.pdf
Technische Information / Technical InformationIGBT-ModuleDF400R12KE3IGBT-modules62mm C-Serien Modul mit Trench/Feldstop IGBT3 und Emitter Controlled Diode 62mm C-series module with trench/fieldstop IGBT3 and Emitter Controlled diode IGBT, Brems-Chopper / IGBT, Brake-ChopperHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vvj CES
df400r07pe4r b6.pdf
Technische Information / Technical InformationIGBT-ModuleDF300R07PE4_B6IGBT-modulesEconoPACK4 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und NTCEconoPACK4 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTCVorlufige Daten / Preliminary DataV = 650VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications An
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
LIST
Last Update
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2