All IGBT. DF400R12KE3 Datasheet

 

DF400R12KE3 Datasheet and Replacement


   Type Designator: DF400R12KE3
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 2000 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 580 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 125 ℃
   tr ⓘ - Rise Time, typ: 90 nS
   Package: MODULE
 

 DF400R12KE3 substitution

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DF400R12KE3 Datasheet (PDF)

 ..1. Size:488K  infineon
 df400r12ke3.pdf pdf_icon

DF400R12KE3

Technische Information / Technical InformationIGBT-ModuleDF400R12KE3IGBT-modules62mm C-Serien Modul mit Trench/Feldstop IGBT3 und Emitter Controlled Diode 62mm C-series module with trench/fieldstop IGBT3 and Emitter Controlled diode IGBT, Brems-Chopper / IGBT, Brake-ChopperHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vvj CES

 8.1. Size:795K  infineon
 df400r07pe4r b6.pdf pdf_icon

DF400R12KE3

Technische Information / Technical InformationIGBT-ModuleDF300R07PE4_B6IGBT-modulesEconoPACK4 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und NTCEconoPACK4 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTCVorlufige Daten / Preliminary DataV = 650VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications An

Datasheet: DF150R12RT4 , DF160R12W2H3_B11 , DF160R12W2H3F_B11 , DF200R12KE3 , DF200R12PT4_B6 , DF200R12W1H3_B27 , DF300R07PE4_B6 , DF300R12KE3 , CRG40T60AN3H , DF600R12IP4D , DF650R17IE4 , DF650R17IE4D_B2 , DF75R12W1H4F_B11 , DF80R12W2H3_B11 , DF80R12W2H3F_B11 , DF900R12IP4D , DF900R12IP4DV .

History: RJP30H2A | APT20GT60BRG

Keywords - DF400R12KE3 transistor datasheet

 DF400R12KE3 cross reference
 DF400R12KE3 equivalent finder
 DF400R12KE3 lookup
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 DF400R12KE3 replacement

 

 
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