DF400R12KE3 Datasheet and Replacement
Type Designator: DF400R12KE3
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 2000 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 580 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 125 ℃
trⓘ - Rise Time, typ: 90 nS
Qgⓘ - Total Gate Charge, typ: 3700 nC
Package: MODULE
- IGBT Cross-Reference
DF400R12KE3 Datasheet (PDF)
df400r12ke3.pdf
Technische Information / Technical InformationIGBT-ModuleDF400R12KE3IGBT-modules62mm C-Serien Modul mit Trench/Feldstop IGBT3 und Emitter Controlled Diode 62mm C-series module with trench/fieldstop IGBT3 and Emitter Controlled diode IGBT, Brems-Chopper / IGBT, Brake-ChopperHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vvj CES
df400r07pe4r b6.pdf
Technische Information / Technical InformationIGBT-ModuleDF300R07PE4_B6IGBT-modulesEconoPACK4 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und NTCEconoPACK4 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTCVorlufige Daten / Preliminary DataV = 650VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications An
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: TGAN20S135FD | STGWA75H65DFB2 | IGC142T120T8RM | DGW50N65CTH | DGTD120T40S1PT
Keywords - DF400R12KE3 transistor datasheet
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History: TGAN20S135FD | STGWA75H65DFB2 | IGC142T120T8RM | DGW50N65CTH | DGTD120T40S1PT
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