DF400R12KE3 Datasheet. Specs and Replacement

Type Designator: DF400R12KE3  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 2000 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 580 A @25℃

Tj ⓘ - Maximum Junction Temperature: 125 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 90 nS

Package: MODULE

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DF400R12KE3 datasheet

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 df400r12ke3.pdf pdf_icon

DF400R12KE3

Technische Information / Technical Information IGBT-Module DF400R12KE3 IGBT-modules 62mm C-Serien Modul mit Trench/Feldstop IGBT3 und Emitter Controlled Diode 62mm C-series module with trench/fieldstop IGBT3 and Emitter Controlled diode IGBT, Brems-Chopper / IGBT, Brake-Chopper H chstzul ssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V vj CES ... See More ⇒

 8.1. Size:795K  infineon
 df400r07pe4r b6.pdf pdf_icon

DF400R12KE3

Technische Information / Technical Information IGBT-Module DF300R07PE4_B6 IGBT-modules EconoPACK 4 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und NTC EconoPACK 4 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTC Vorl ufige Daten / Preliminary Data V = 650V CES I = 300A / I = 600A C nom CRM Typische Anwendungen Typical Applications An... See More ⇒

Specs: DF150R12RT4, DF160R12W2H3_B11, DF160R12W2H3F_B11, DF200R12KE3, DF200R12PT4_B6, DF200R12W1H3_B27, DF300R07PE4_B6, DF300R12KE3, BT40T60ANF, DF600R12IP4D, DF650R17IE4, DF650R17IE4D_B2, DF75R12W1H4F_B11, DF80R12W2H3_B11, DF80R12W2H3F_B11, DF900R12IP4D, DF900R12IP4DV

Keywords - DF400R12KE3 transistor spec

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