DF650R17IE4D_B2 Datasheet. Specs and Replacement

Type Designator: DF650R17IE4D_B2  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 4015 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 930 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 105 nS

Package: MODULE

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DF650R17IE4D_B2 datasheet

 0.1. Size:1940K  infineon
 df650r17ie4d b2.pdf pdf_icon

DF650R17IE4D_B2

/ Technical Information IGBT- DF650R17IE4D_B2 IGBT-modules PrimePACK 2 and NTC PrimePACK 2 module and NTC / Preliminary Data V = 1700V CES I = 650A / I = 1300A C nom CRM Typical Applications 3 3-Level-Applications ... See More ⇒

 3.1. Size:1680K  infineon
 df650r17ie4.pdf pdf_icon

DF650R17IE4D_B2

Technische Information / Technical Information IGBT-Module DF650R17IE4 IGBT-modules PrimePACK 2 Modul und NTC PrimePACK 2 module and NTC Vorl ufige Daten / Preliminary Data V = 1700V CES I = 650A / I = 1300A C nom CRM Typische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Chopper-Anwendungen Chopper Applications Hochleistungsu... See More ⇒

Specs: DF200R12KE3, DF200R12PT4_B6, DF200R12W1H3_B27, DF300R07PE4_B6, DF300R12KE3, DF400R12KE3, DF600R12IP4D, DF650R17IE4, SGT40N60NPFDPN, DF75R12W1H4F_B11, DF80R12W2H3_B11, DF80R12W2H3F_B11, DF900R12IP4D, DF900R12IP4DV, DIM1000ECM33-TL, DIM1000ECM33-TS, DIM1000NSM33-TL

Keywords - DF650R17IE4D_B2 transistor spec

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