DF650R17IE4D_B2 PDF Specs and Replacement
Type Designator: DF650R17IE4D_B2
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 4015 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 930 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
tr ⓘ - Rise Time, typ: 105 nS
Qg ⓘ - Total Gate Charge, typ: 7000 nC
Package: MODULE
DF650R17IE4D_B2 Substitution
DF650R17IE4D_B2 PDF specs
df650r17ie4d b2.pdf
/ Technical Information IGBT- DF650R17IE4D_B2 IGBT-modules PrimePACK 2 and NTC PrimePACK 2 module and NTC / Preliminary Data V = 1700V CES I = 650A / I = 1300A C nom CRM Typical Applications 3 3-Level-Applications ... See More ⇒
df650r17ie4.pdf
Technische Information / Technical Information IGBT-Module DF650R17IE4 IGBT-modules PrimePACK 2 Modul und NTC PrimePACK 2 module and NTC Vorl ufige Daten / Preliminary Data V = 1700V CES I = 650A / I = 1300A C nom CRM Typische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Chopper-Anwendungen Chopper Applications Hochleistungsu... See More ⇒
Specs: DF200R12KE3 , DF200R12PT4_B6 , DF200R12W1H3_B27 , DF300R07PE4_B6 , DF300R12KE3 , DF400R12KE3 , DF600R12IP4D , DF650R17IE4 , FGA60N65SMD , DF75R12W1H4F_B11 , DF80R12W2H3_B11 , DF80R12W2H3F_B11 , DF900R12IP4D , DF900R12IP4DV , DIM1000ECM33-TL , DIM1000ECM33-TS , DIM1000NSM33-TL .
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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