All IGBT. DF75R12W1H4F_B11 Datasheet

 

DF75R12W1H4F_B11 Datasheet and Replacement


   Type Designator: DF75R12W1H4F_B11
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 230 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 14 nS
   Qgⓘ - Total Gate Charge, typ: 11000 nC
   Package: MODULE
      - IGBT Cross-Reference

 

DF75R12W1H4F_B11 Datasheet (PDF)

 0.1. Size:952K  infineon
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DF75R12W1H4F_B11

/ Technical InformationIGBT-DF75R12W1H4F_B11IGBT-modulesV = 1200VCESI = 75A / I = 150AC nom CRM Typical Applications Solar Applications Electrical Features Low Switching Losses Mechanical Fe

Datasheet: DF200R12PT4_B6 , DF200R12W1H3_B27 , DF300R07PE4_B6 , DF300R12KE3 , DF400R12KE3 , DF600R12IP4D , DF650R17IE4 , DF650R17IE4D_B2 , IRG7IC28U , DF80R12W2H3_B11 , DF80R12W2H3F_B11 , DF900R12IP4D , DF900R12IP4DV , DIM1000ECM33-TL , DIM1000ECM33-TS , DIM1000NSM33-TL , DIM1000NSM33-TS .

History: DIM1000ECM33-TS | IGC114T170S8RH | DIM2400ESS12-A

Keywords - DF75R12W1H4F_B11 transistor datasheet

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