DF80R12W2H3F_B11 Datasheet and Replacement
Type Designator: DF80R12W2H3F_B11
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 190 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
tr ⓘ - Rise Time, typ: 10 nS
Qg ⓘ - Total Gate Charge, typ: 320 nC
Package: MODULE
DF80R12W2H3F_B11 substitution
DF80R12W2H3F_B11 Datasheet (PDF)
df80r12w2h3f b11.pdf
/ Technical InformationIGBT-DF80R12W2H3F_B11IGBT-modules / Preliminary DataV = 1200VCESI = 80A / I = 160AC nom CRM Typical Applications Solar Applications Electrical Features IGBT H3 High Speed IGBT H3 Low Switching Losses thinQ
df80r12w2h3f-b11.pdf
DF80R12W2H3F_B11EasyPACK Modul mit schnellem Trench/Feldstopp High-Speed 3 IGBT und SiC Diode und PressFIT / NTCEasyPACK module with fast Trench/Fieldstop High-Speed 3 IGBT and SiC diode and PressFIT / NTCV = 1200VCESI = 80A / I = 160AC nom CRMTypische Anwendungen Typical Applications Solar Anwendungen Solar applicationsElektrische Eigenschaften Electrical Features
df80r12w2h3 b11.pdf
/ Technical InformationIGBT-DF80R12W2H3_B11IGBT-modules / Preliminary DataV = 1200VCESI = 80A / I = 160AC nom CRM Typical Applications Solar Applications UPS UPS Systems Electrical Features IGBT
Datasheet: DF300R07PE4_B6 , DF300R12KE3 , DF400R12KE3 , DF600R12IP4D , DF650R17IE4 , DF650R17IE4D_B2 , DF75R12W1H4F_B11 , DF80R12W2H3_B11 , SGT50T65FD1PN , DF900R12IP4D , DF900R12IP4DV , DIM1000ECM33-TL , DIM1000ECM33-TS , DIM1000NSM33-TL , DIM1000NSM33-TS , DIM1000XSM33-TL001 , DIM1000XSM33-TS001 .
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