DF80R12W2H3F_B11 IGBT. Datasheet pdf. Equivalent
Type Designator: DF80R12W2H3F_B11
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 190 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
trⓘ - Rise Time, typ: 10 nS
Package: MODULE
DF80R12W2H3F_B11 Transistor Equivalent Substitute - IGBT Cross-Reference Search
DF80R12W2H3F_B11 Datasheet (PDF)
df80r12w2h3f b11.pdf
/ Technical InformationIGBT-DF80R12W2H3F_B11IGBT-modules / Preliminary DataV = 1200VCESI = 80A / I = 160AC nom CRM Typical Applications Solar Applications Electrical Features IGBT H3 High Speed IGBT H3 Low Switching Losses thinQ
df80r12w2h3f-b11.pdf
DF80R12W2H3F_B11EasyPACK Modul mit schnellem Trench/Feldstopp High-Speed 3 IGBT und SiC Diode und PressFIT / NTCEasyPACK module with fast Trench/Fieldstop High-Speed 3 IGBT and SiC diode and PressFIT / NTCV = 1200VCESI = 80A / I = 160AC nom CRMTypische Anwendungen Typical Applications Solar Anwendungen Solar applicationsElektrische Eigenschaften Electrical Features
df80r12w2h3 b11.pdf
/ Technical InformationIGBT-DF80R12W2H3_B11IGBT-modules / Preliminary DataV = 1200VCESI = 80A / I = 160AC nom CRM Typical Applications Solar Applications UPS UPS Systems Electrical Features IGBT
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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