DF900R12IP4D PDF and Equivalents Search

 

DF900R12IP4D PDF Specs and Replacement


   Type Designator: DF900R12IP4D
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 5100 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 900 A @25℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   tr ⓘ - Rise Time, typ: 140 nS
   Package: MODULE
 

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DF900R12IP4D PDF specs

 ..1. Size:1765K  infineon
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DF900R12IP4D

Technische Information / Technical Information IGBT-Module DF900R12IP4D IGBT-modules PrimePACK 2 Modul mit Trench/Feldstopp IGBT4, gr erer Emitter Controlled 4 Diode PrimePACK 2 module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode Vorl ufige Daten / Preliminary Data V = 1200V CES I = 900A / I = 1800A C nom CRM Typische Anwendungen Typical Applications ... See More ⇒

 0.1. Size:1763K  infineon
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DF900R12IP4D

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Specs: DF300R12KE3 , DF400R12KE3 , DF600R12IP4D , DF650R17IE4 , DF650R17IE4D_B2 , DF75R12W1H4F_B11 , DF80R12W2H3_B11 , DF80R12W2H3F_B11 , RJP63F3DPP-M0 , DF900R12IP4DV , DIM1000ECM33-TL , DIM1000ECM33-TS , DIM1000NSM33-TL , DIM1000NSM33-TS , DIM1000XSM33-TL001 , DIM1000XSM33-TS001 , DIM100PHM33-F .

History: DF900R12IP4DV

Keywords - DF900R12IP4D transistor spec

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