DIM1800ESS12-A Datasheet and Replacement
Type Designator: DIM1800ESS12-A
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 15625 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 1800 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 200 nS
Qgⓘ - Total Gate Charge, typ: 20000 nC
Package: MODULE
- IGBT Cross-Reference
DIM1800ESS12-A Datasheet (PDF)
dim1800ess12-a.pdf

DIM1800ESS12-A000 Single Switch IGBT Module Replaces DS5857-1.1 DS5857-2 October 2010 (LN27614) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V Non Punch Through Silicon IC (max) 1800A Isolated Cu Base with Al2O3 Substrates IC(PK) (max) 3600A Lead Free construction * Measured at the power busbars, not the auxiliary
dim1800esm12-a.pdf

DIM1800ESM12-A000 Single Switch IGBT Module Replaces DS5529-3 DS5529-4 October 2010 (LN27613) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1800A Non Punch Through Silicon IC(PK) (max) 3600A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the a
Datasheet: DIM1500ASM33-TS001 , DIM1500ESM33-TL , DIM1500ESM33-TS , DIM1600ECM17-A , DIM1600FSM12-A , DIM1600FSM17-A , DIM1600FSS12-A , DIM1800ESM12-A , IKW50N60H3 , DIM200PHM33-F , DIM200PKM33-F , DIM200PLM33-F , DIM2400ESM12-A , DIM2400ESM17-A , DIM2400ESS12-A , DIM250PHM33-TL , DIM250PHM33-TS .
History: IGC18T120T6L | IGC07T120T6L | IGP20N65F5 | DF650R17IE4D_B2 | IGW30N60T | IGB50N65S5
Keywords - DIM1800ESS12-A transistor datasheet
DIM1800ESS12-A cross reference
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History: IGC18T120T6L | IGC07T120T6L | IGP20N65F5 | DF650R17IE4D_B2 | IGW30N60T | IGB50N65S5



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