DIM2400ESM12-A IGBT. Datasheet pdf. Equivalent
Type Designator: DIM2400ESM12-A
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 20830
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Collector-Emitter saturation Voltage |Vcesat|, V: 2.2
Maximum Gate-Emitter Voltage |Veg|, V: 20
Maximum Collector Current |Ic|, A: 2400
Maximum Junction Temperature (Tj), °C: 150
Rise Time, nS: 230
Package: MODULE
DIM2400ESM12-A Transistor Equivalent Substitute - IGBT Cross-Reference Search
DIM2400ESM12-A Datasheet (PDF)
0.1. dim2400esm12-a.pdf Size:437K _dynex
DIM2400ESM12-A000 Single Switch IGBT Module Replaces DS5536-3.0 DS5536-4 October 2010 (LN27615) FEATURES KEY PARAMETERS 10µs Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 2400A Non Punch Through Silicon IC(PK) (max) 4800A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the
3.1. dim2400esm17-a.pdf Size:463K _dynex
DIM2400ESM17-A000 Single Switch IGBT Module Replaces DS54447-5 DS5447-6 June 2012 (LN29603) FEATURES KEY PARAMETERS 10µs Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 2400A Non Punch Through Silicon IC(PK) (max) 4800A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the aux
5.1. dim2400ess12-a.pdf Size:435K _dynex
DIM2400ESS12-A000 Single Switch IGBT Module Replaces DS5840-1.1 DS5840-2 October 2010 (LN27616) FEATURES KEY PARAMETERS 10µs Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V Non Punch Through Silicon IC (max) 2400A Isolated Cu Base with Al2O3 Substrates IC(PK) (max) 4800A Lead Free construction * Measured at the power busbars, not the auxiliary
Datasheet: DIM1600FSM12-A , DIM1600FSM17-A , DIM1600FSS12-A , DIM1800ESM12-A , DIM1800ESS12-A , DIM200PHM33-F , DIM200PKM33-F , DIM200PLM33-F , SGP10N60A , DIM2400ESM17-A , DIM2400ESS12-A , DIM250PHM33-TL , DIM250PHM33-TS , DIM250PKM33-TL , DIM250PKM33-TS , DIM250PLM33-TL , DIM250PLM33-TS .



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