MBN400GR12A Datasheet. Specs and Replacement
Type Designator: MBN400GR12A 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 2500 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 400 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
Package: MODULE
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MBN400GR12A Substitution
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MBN400GR12A datasheet
Specs: DIM800ECM33-F, DIM800FSM12-A, DIM800FSM17-A, DIM800FSS12-A, DIM800NSM33-F, DIM800XSM33-F, DIM800XSM45-TS, DIM800XSM45-TS001, GT30F131, MBN600GR12A, MG06100S-BR1MM, MG06150S-BN4MM, MG06200S-BN4MM, MG06300D-BN4MM, MG06400D-BN1MM, MG06400D-BN4MM, MG06600WB-BN4MM
Keywords - MBN400GR12A transistor spec
MBN400GR12A cross reference
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History: RJH60M3DPP-M0
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