All IGBT. MBN400GR12A Datasheet

 

MBN400GR12A IGBT. Datasheet pdf. Equivalent


   Type Designator: MBN400GR12A
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 2500 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 400 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 10 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 200 nS
   Package: MODULE

 MBN400GR12A Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MBN400GR12A Datasheet (PDF)

 ..1. Size:117K  hitachi
mbn400gr12a.pdf

MBN400GR12A
MBN400GR12A

PDE-N400GR12A-0Hitachi IGBT Module / Silicon N-Channel IGBT MBN400GR12A [Rated 400A/1200V, Single-pack type] FEATURES OUTLINE DRAWING Low saturation voltage and high speed. Unit in mm Low turn-OFF switching loss. 10893 Low noise due to built-in free-wheeling diode. (Ultra Soft and Fast recovery Diode (USFD)) 2-M4 2-M6 High reliability structure.

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