All IGBT. MBN600GR12A Datasheet

 

MBN600GR12A Datasheet and Replacement


   Type Designator: MBN600GR12A
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 3790 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 600 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 10 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 200 nS
   Package: MODULE
 

 MBN600GR12A substitution

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MBN600GR12A Datasheet (PDF)

 ..1. Size:74K  hitachi
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MBN600GR12A

PDE-N600GR12A-0Hitachi IGBT Module / Silicon N-Channel IGBT MBN600GR12A [Rated 600A/1200V, Single-pack type] FEATURES OUTLINE DRAWING Low saturation voltage and high speed. Unit in mm Low turn-OFF switching loss. 1104-6.593 Low noise due to built-in free-wheeling diode. (Ultra Soft and Fast recovery Diode (USFD)) 2-M8 High reliability structure.

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IXRP15N120 | IXGH40N60B2 | MG300Q2YS50 | T2250AB25E | NGTB20N120IHRWG | IRG4PH50UDPBF

Keywords - MBN600GR12A transistor datasheet

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