All IGBT. MBN600GR12A Datasheet

 

MBN600GR12A IGBT. Datasheet pdf. Equivalent


   Type Designator: MBN600GR12A
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 3790 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 600 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 10 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 200 nS
   Package: MODULE

 MBN600GR12A Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MBN600GR12A Datasheet (PDF)

 ..1. Size:74K  hitachi
 mbn600gr12a.pdf

MBN600GR12A MBN600GR12A

PDE-N600GR12A-0Hitachi IGBT Module / Silicon N-Channel IGBT MBN600GR12A [Rated 600A/1200V, Single-pack type] FEATURES OUTLINE DRAWING Low saturation voltage and high speed. Unit in mm Low turn-OFF switching loss. 1104-6.593 Low noise due to built-in free-wheeling diode. (Ultra Soft and Fast recovery Diode (USFD)) 2-M8 High reliability structure.

Datasheet: DIM800FSM12-A , DIM800FSM17-A , DIM800FSS12-A , DIM800NSM33-F , DIM800XSM33-F , DIM800XSM45-TS , DIM800XSM45-TS001 , MBN400GR12A , IRG4PC40UD , MG06100S-BR1MM , MG06150S-BN4MM , MG06200S-BN4MM , MG06300D-BN4MM , MG06400D-BN1MM , MG06400D-BN4MM , MG06600WB-BN4MM , MG100Q2YS40 .

 

 
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