MBN600GR12A Datasheet. Specs and Replacement

Type Designator: MBN600GR12A  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 3790 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 600 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 200 nS

Package: MODULE

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MBN600GR12A datasheet

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MBN600GR12A

PDE-N600GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBN600GR12A [Rated 600A/1200V, Single-pack type] FEATURES OUTLINE DRAWING Low saturation voltage and high speed. Unit in mm Low turn-OFF switching loss. 110 4- 6.5 93 Low noise due to built-in free-wheeling diode. (Ultra Soft and Fast recovery Diode (USFD)) 2-M8 High reliability structure. ... See More ⇒

Specs: DIM800FSM12-A, DIM800FSM17-A, DIM800FSS12-A, DIM800NSM33-F, DIM800XSM33-F, DIM800XSM45-TS, DIM800XSM45-TS001, MBN400GR12A, IRG4PF50W, MG06100S-BR1MM, MG06150S-BN4MM, MG06200S-BN4MM, MG06300D-BN4MM, MG06400D-BN1MM, MG06400D-BN4MM, MG06600WB-BN4MM, MG100Q2YS40

Keywords - MBN600GR12A transistor spec

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