All IGBT. MG06200S-BN4MM Datasheet

 

MG06200S-BN4MM IGBT. Datasheet pdf. Equivalent


   Type Designator: MG06200S-BN4MM
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 600 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 300 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 30 nS
   Qgⓘ - Total Gate Charge, typ: 2150 nC
   Package: MODULE

 MG06200S-BN4MM Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MG06200S-BN4MM Datasheet (PDF)

 ..1. Size:1346K  littelfuse
 mg06200s-bn4mm.pdf

MG06200S-BN4MM MG06200S-BN4MM

Power Module600V 200A IGBT ModuleRoHSMG06200S-BN4MMFeatures High short circuit Free wheeling diodes capability, self limiting with fast and soft reverse short circuit current recovery VCE(sat) with positive Low switching lossestemperature coefficient Fast switching and short tail currentApplicationsAgency Approvals High frequency Motion/se

Datasheet: DIM800NSM33-F , DIM800XSM33-F , DIM800XSM45-TS , DIM800XSM45-TS001 , MBN400GR12A , MBN600GR12A , MG06100S-BR1MM , MG06150S-BN4MM , TGAN40N60FD , MG06300D-BN4MM , MG06400D-BN1MM , MG06400D-BN4MM , MG06600WB-BN4MM , MG100Q2YS40 , MG100Q2YS50 , MG100Q2YS51 , MG100Q2YS65H .

 

 
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