MG06200S-BN4MM PDF Specs and Replacement
Type Designator: MG06200S-BN4MM
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 600 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 300 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
tr ⓘ - Rise Time, typ: 30 nS
Package: MODULE
MG06200S-BN4MM Substitution
MG06200S-BN4MM PDF specs
mg06200s-bn4mm.pdf
Power Module 600V 200A IGBT Module RoHS MG06200S-BN4MM Features High short circuit Free wheeling diodes capability, self limiting with fast and soft reverse short circuit current recovery VCE(sat) with positive Low switching losses temperature coefficient Fast switching and short tail current Applications Agency Approvals High frequency Motion/se... See More ⇒
Specs: DIM800NSM33-F , DIM800XSM33-F , DIM800XSM45-TS , DIM800XSM45-TS001 , MBN400GR12A , MBN600GR12A , MG06100S-BR1MM , MG06150S-BN4MM , FGPF4533 , MG06300D-BN4MM , MG06400D-BN1MM , MG06400D-BN4MM , MG06600WB-BN4MM , MG100Q2YS40 , MG100Q2YS50 , MG100Q2YS51 , MG100Q2YS65H .
History: CM150TL-12NF
Keywords - MG06200S-BN4MM transistor spec
MG06200S-BN4MM cross reference
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History: CM150TL-12NF
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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