MG100Q2YS65H Datasheet and Replacement
Type Designator: MG100Q2YS65H
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 690 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 50 nS
Package: MODULE
- IGBT Cross-Reference
MG100Q2YS65H Datasheet (PDF)
mg100q2ys65h.pdf
MG100Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG100Q2YS65H High Power & High Speed Switching Unit: mmApplications High input impedance Enhancement-mode The electrodes are isolated from case. Equivalent Circuit E1 E2 C1 E2JEDEC G1 E1/C2 G2 JEITA TOSHIBA 2-95A4A Weight: 255 g (typ.) Maximum Ratings (Ta == 25C) ==Characteri
Datasheet: MG06200S-BN4MM , MG06300D-BN4MM , MG06400D-BN1MM , MG06400D-BN4MM , MG06600WB-BN4MM , MG100Q2YS40 , MG100Q2YS50 , MG100Q2YS51 , MBQ60T65PES , MG10Q6ES50A , MG12100D-BA1MM , MG12100S-BN2MM , MG12100W-XN2MM , MG12105S-BA1MM , MG12150D-BA1MM , MG12150S-BN2MM , MG12150W-XN2MM .
History: IXA12IF1200PC | CM200E3U-24F | SIGC03T60E | 7MBR25SA120-01 | VS-100MT060WDF | STGP30V60F | CRG05T60A44S-G
Keywords - MG100Q2YS65H transistor datasheet
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History: IXA12IF1200PC | CM200E3U-24F | SIGC03T60E | 7MBR25SA120-01 | VS-100MT060WDF | STGP30V60F | CRG05T60A44S-G
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