MG100Q2YS65H Datasheet. Specs and Replacement

Type Designator: MG100Q2YS65H  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 690 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Package: MODULE

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MG100Q2YS65H datasheet

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MG100Q2YS65H

MG100Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG100Q2YS65H High Power & High Speed Switching Unit mm Applications High input impedance Enhancement-mode The electrodes are isolated from case. Equivalent Circuit E1 E2 C1 E2 JEDEC G1 E1/C2 G2 JEITA TOSHIBA 2-95A4A Weight 255 g (typ.) Maximum Ratings (Ta = = 25 C) = = Characteri... See More ⇒

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Specs: MG06200S-BN4MM, MG06300D-BN4MM, MG06400D-BN1MM, MG06400D-BN4MM, MG06600WB-BN4MM, MG100Q2YS40, MG100Q2YS50, MG100Q2YS51, GT30J127, MG10Q6ES50A, MG12100D-BA1MM, MG12100S-BN2MM, MG12100W-XN2MM, MG12105S-BA1MM, MG12150D-BA1MM, MG12150S-BN2MM, MG12150W-XN2MM

Keywords - MG100Q2YS65H transistor spec

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