All IGBT. MG1750S-BN4MM Datasheet

 

MG1750S-BN4MM Datasheet and Replacement


   Type Designator: MG1750S-BN4MM
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 320 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 40 nS
   Qgⓘ - Total Gate Charge, typ: 600 nC
   Package: MODULE
      - IGBT Cross-Reference

 

MG1750S-BN4MM Datasheet (PDF)

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MG1750S-BN4MM

Power Module1700V 50A IGBT ModuleRoHSMG1750S-BN4MM Features IGBT3 CHIP(1700V DIODE CHIP(1700V Trench+Field Stop EMCON 3 technology)technology) Free wheeling diodes Low turn-off losses, short with fast and soft reverse tail current recovery VCE(sat) with positive temperature coefficientApplicationsAgency Approvals High frequency switching

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: MG25Q6ES51 | 7MBR75U2B060

Keywords - MG1750S-BN4MM transistor datasheet

 MG1750S-BN4MM cross reference
 MG1750S-BN4MM equivalent finder
 MG1750S-BN4MM lookup
 MG1750S-BN4MM substitution
 MG1750S-BN4MM replacement

 

 
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