MG1750S-BN4MM PDF and Equivalents Search

 

MG1750S-BN4MM Specs and Replacement

Type Designator: MG1750S-BN4MM

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 320 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 40 nS

Package: MODULE

 MG1750S-BN4MM Substitution

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MG1750S-BN4MM datasheet

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MG1750S-BN4MM

Power Module 1700V 50A IGBT Module RoHS MG1750S-BN4MM Features IGBT3 CHIP(1700V DIODE CHIP(1700V Trench+Field Stop EMCON 3 technology) technology) Free wheeling diodes Low turn-off losses, short with fast and soft reverse tail current recovery VCE(sat) with positive temperature coefficient Applications Agency Approvals High frequency switching ... See More ⇒

Specs: MG17100D-BN4MM, MG17100S-BN4MM, MG17150D-BN4MM, MG17200D-BN4MM, MG17225WB-BN4MM, MG17300D-BN4MM, MG17300WB-BN4MM, MG17450WB-BN4MM, SGT60U65FD1PT, MG1775S-BN4MM, MG200J2YS50, MG200J6ES60, MG200J6ES61, MG200Q1US41, MG200Q1US51, MG200Q2YS40, MG200Q2YS50

Keywords - MG1750S-BN4MM transistor spec

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