All IGBT. MG200J2YS50 Datasheet

 

MG200J2YS50 Datasheet and Replacement


   Type Designator: MG200J2YS50
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 900 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 150 nS
   Package: MODULE
 

 MG200J2YS50 substitution

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MG200J2YS50 Datasheet (PDF)

 ..1. Size:129K  toshiba
mg200j2ys50.pdf pdf_icon

MG200J2YS50

 8.1. Size:95K  toshiba
mg200j6es60.pdf pdf_icon

MG200J2YS50

MG200J6ES60 TOSHIBA GTR Module Silicon N Channel IGBT MG200J6ES60(600V/200A 6in1) High Power Switching Applications Motor Control Applications Integrates inverter power circuit in to a single package. The electrodes are isolated from case. Low thermal resistance VCE (sat) = 1.6 V (typ.) Equivalent Circuit PCN-1:7CN-1:6 CN-1:4 CN-1:2CN-1:8CN-1:5 CN-1:

 8.2. Size:221K  powerex
mg200j6es61.pdf pdf_icon

MG200J2YS50

MG200J6ES61Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Six IGBTMOD Compact IGBT Series Module200 Amperes/600 VoltsAD LJ KMHUGN PDETAIL "A"C BF EU V WHTQ Q R SNPDescription:RPowerex Six IGBTMOD VPCompact IGBT Series Modules Ware designed for use in switching Xapplications. Each module

 9.1. Size:112K  toshiba
mg200q2ys40.pdf pdf_icon

MG200J2YS50

Datasheet: MG17150D-BN4MM , MG17200D-BN4MM , MG17225WB-BN4MM , MG17300D-BN4MM , MG17300WB-BN4MM , MG17450WB-BN4MM , MG1750S-BN4MM , MG1775S-BN4MM , STGB10NB37LZ , MG200J6ES60 , MG200J6ES61 , MG200Q1US41 , MG200Q1US51 , MG200Q2YS40 , MG200Q2YS50 , MG200Q2YS65H , MG25J6ES40 .

History: SKM300GA123D | IRG4P254S

Keywords - MG200J2YS50 transistor datasheet

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