MG200J6ES61 PDF and Equivalents Search

 

MG200J6ES61 Specs and Replacement

Type Designator: MG200J6ES61

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1000 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 200 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

Package: MODULE

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MG200J6ES61 datasheet

 ..1. Size:221K  powerex
mg200j6es61.pdf pdf_icon

MG200J6ES61

MG200J6ES61 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Six IGBTMOD Compact IGBT Series Module 200 Amperes/600 Volts A D L J K M H U G N P DETAIL "A" C B F E U V W H T Q Q R S N P Description R Powerex Six IGBTMOD V P Compact IGBT Series Modules W are designed for use in switching X applications. Each module ... See More ⇒

 4.1. Size:95K  toshiba
mg200j6es60.pdf pdf_icon

MG200J6ES61

MG200J6ES60 TOSHIBA GTR Module Silicon N Channel IGBT MG200J6ES60(600V/200A 6in1) High Power Switching Applications Motor Control Applications Integrates inverter power circuit in to a single package. The electrodes are isolated from case. Low thermal resistance VCE (sat) = 1.6 V (typ.) Equivalent Circuit P CN-1 7 CN-1 6 CN-1 4 CN-1 2 CN-1 8 CN-1 5 CN-1 ... See More ⇒

 8.1. Size:129K  toshiba
mg200j2ys50.pdf pdf_icon

MG200J6ES61

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 9.1. Size:112K  toshiba
mg200q2ys40.pdf pdf_icon

MG200J6ES61

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Specs: MG17225WB-BN4MM, MG17300D-BN4MM, MG17300WB-BN4MM, MG17450WB-BN4MM, MG1750S-BN4MM, MG1775S-BN4MM, MG200J2YS50, MG200J6ES60, IKW30N60H3, MG200Q1US41, MG200Q1US51, MG200Q2YS40, MG200Q2YS50, MG200Q2YS65H, MG25J6ES40, MG25N2YS1, MG25Q1BS11

Keywords - MG200J6ES61 transistor spec

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