All IGBT. MG200Q2YS40 Datasheet

 

MG200Q2YS40 Datasheet and Replacement


   Type Designator: MG200Q2YS40
   Type: IGBT + Anti-Parallel Diode + Built-in Zener Diodes
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 1300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 300 nS
   Package: MODULE
 

 MG200Q2YS40 substitution

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MG200Q2YS40 Datasheet (PDF)

 ..1. Size:112K  toshiba
mg200q2ys40.pdf pdf_icon

MG200Q2YS40

 5.1. Size:156K  toshiba
mg200q2ys65h.pdf pdf_icon

MG200Q2YS40

MG200Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS65H High Power & High Speed Switching Unit: mmApplications High input impedance Enhancement-mode The electrodes are isolated from case. Equivalent Circuit E1 E2 C1 E2JEDEC G1 E1/C2 G2 JEITA TOSHIBA 2-109C4A Weight: 430 g (typ.) Maximum Ratings (Tc == 25C) ==Character

 5.2. Size:337K  toshiba
mg200q2ys50.pdf pdf_icon

MG200Q2YS40

 8.1. Size:120K  toshiba
mg200q1us51.pdf pdf_icon

MG200Q2YS40

Datasheet: MG17450WB-BN4MM , MG1750S-BN4MM , MG1775S-BN4MM , MG200J2YS50 , MG200J6ES60 , MG200J6ES61 , MG200Q1US41 , MG200Q1US51 , CRG75T60AK3HD , MG200Q2YS50 , MG200Q2YS65H , MG25J6ES40 , MG25N2YS1 , MG25Q1BS11 , MG25Q2YS40 , MG25Q6ES42 , MG25Q6ES50A .

History: 2MBI300LB-060 | YGW25N120F1A1 | AUIRGB4062D1 | IXSH30N60U1

Keywords - MG200Q2YS40 transistor datasheet

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 MG200Q2YS40 equivalent finder
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