All IGBT. MG200Q2YS40 Datasheet

 

MG200Q2YS40 Datasheet and Replacement


   Type Designator: MG200Q2YS40
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 300 nS
   Package: MODULE
      - IGBT Cross-Reference

 

MG200Q2YS40 Datasheet (PDF)

 ..1. Size:112K  toshiba
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MG200Q2YS40

 5.1. Size:156K  toshiba
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MG200Q2YS40

MG200Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS65H High Power & High Speed Switching Unit: mmApplications High input impedance Enhancement-mode The electrodes are isolated from case. Equivalent Circuit E1 E2 C1 E2JEDEC G1 E1/C2 G2 JEITA TOSHIBA 2-109C4A Weight: 430 g (typ.) Maximum Ratings (Tc == 25C) ==Character

 5.2. Size:337K  toshiba
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MG200Q2YS40

 8.1. Size:120K  toshiba
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MG200Q2YS40

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: NCE30TD60BP | FD200R12PT4_B6

Keywords - MG200Q2YS40 transistor datasheet

 MG200Q2YS40 cross reference
 MG200Q2YS40 equivalent finder
 MG200Q2YS40 lookup
 MG200Q2YS40 substitution
 MG200Q2YS40 replacement

 

 
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