All IGBT. MG200Q2YS50 Datasheet

 

MG200Q2YS50 Datasheet and Replacement


   Type Designator: MG200Q2YS50
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1400 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 300 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 50 nS
   Package: MODULE
      - IGBT Cross-Reference

 

MG200Q2YS50 Datasheet (PDF)

 ..1. Size:337K  toshiba
mg200q2ys50.pdf pdf_icon

MG200Q2YS50

 5.1. Size:112K  toshiba
mg200q2ys40.pdf pdf_icon

MG200Q2YS50

 5.2. Size:156K  toshiba
mg200q2ys65h.pdf pdf_icon

MG200Q2YS50

MG200Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS65H High Power & High Speed Switching Unit: mmApplications High input impedance Enhancement-mode The electrodes are isolated from case. Equivalent Circuit E1 E2 C1 E2JEDEC G1 E1/C2 G2 JEITA TOSHIBA 2-109C4A Weight: 430 g (typ.) Maximum Ratings (Tc == 25C) ==Character

 8.1. Size:120K  toshiba
mg200q1us51.pdf pdf_icon

MG200Q2YS50

Datasheet: MG1750S-BN4MM , MG1775S-BN4MM , MG200J2YS50 , MG200J6ES60 , MG200J6ES61 , MG200Q1US41 , MG200Q1US51 , MG200Q2YS40 , GT30F125 , MG200Q2YS65H , MG25J6ES40 , MG25N2YS1 , MG25Q1BS11 , MG25Q2YS40 , MG25Q6ES42 , MG25Q6ES50A , MG25Q6ES51 .

History: MMG300D120B6UC

Keywords - MG200Q2YS50 transistor datasheet

 MG200Q2YS50 cross reference
 MG200Q2YS50 equivalent finder
 MG200Q2YS50 lookup
 MG200Q2YS50 substitution
 MG200Q2YS50 replacement

 

 
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