MG300N1US1 PDF and Equivalents Search

 

MG300N1US1 Specs and Replacement

Type Designator: MG300N1US1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1400 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 300 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.5 V @25℃

tr ⓘ - Rise Time, typ: 1000 nS

Package: MODULE

 MG300N1US1 Substitution

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MG300N1US1 datasheet

 ..1. Size:179K  toshiba
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MG300N1US1

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 9.1. Size:300K  toshiba
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MG300N1US1

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 9.2. Size:83K  toshiba
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MG300N1US1

MG300Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q2YS50 High Power Switching Applications Unit mm Motor Control Applications High input impedance High speed t = 0.3 s (Max.) f Inductive load Low saturation voltage V = 3.6V (Max.) CE (sat) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isolated from case. ... See More ⇒

 9.3. Size:111K  toshiba
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MG300N1US1

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Specs: MG25N2YS1, MG25Q1BS11, MG25Q2YS40, MG25Q6ES42, MG25Q6ES50A, MG25Q6ES51, MG300J2YS40, MG300J2YS50, GT30G122, MG300Q1US11, MG300Q2YS40, MG300Q2YS50, MG50J1BS11, MG50J2YS50, MG50J6ES50, MG50Q1BS11, MG50Q2YS40

Keywords - MG300N1US1 transistor spec

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