All IGBT. MG300N1US1 Datasheet

 

MG300N1US1 Datasheet and Replacement


   Type Designator: MG300N1US1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 1400 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 300 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.5 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 1000 nS
   Package: MODULE
 

 MG300N1US1 substitution

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MG300N1US1 Datasheet (PDF)

 ..1. Size:179K  toshiba
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MG300N1US1

 9.1. Size:300K  toshiba
mg300j2ys50.pdf pdf_icon

MG300N1US1

 9.2. Size:83K  toshiba
mg300q2ys50.pdf pdf_icon

MG300N1US1

MG300Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q2YS50 High Power Switching Applications Unit: mmMotor Control Applications High input impedance High speed : t = 0.3s (Max.) f Inductive load Low saturation voltage : V = 3.6V (Max.) CE (sat) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isolated from case.

 9.3. Size:111K  toshiba
mg300q1us11.pdf pdf_icon

MG300N1US1

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: NGTB20N135IHRWG | RJH60V3BDPP-M0 | NGTB40N120L | FGB3040CS

Keywords - MG300N1US1 transistor datasheet

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