All IGBT. MG300Q1US11 Datasheet

 

MG300Q1US11 Datasheet and Replacement


   Type Designator: MG300Q1US11
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 2000 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 300 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 300 nS
   Package: MODULE
      - IGBT Cross-Reference

 

MG300Q1US11 Datasheet (PDF)

 ..1. Size:111K  toshiba
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MG300Q1US11

 8.1. Size:83K  toshiba
mg300q2ys50.pdf pdf_icon

MG300Q1US11

MG300Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q2YS50 High Power Switching Applications Unit: mmMotor Control Applications High input impedance High speed : t = 0.3s (Max.) f Inductive load Low saturation voltage : V = 3.6V (Max.) CE (sat) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isolated from case.

 8.2. Size:143K  toshiba
mg300q2ys40.pdf pdf_icon

MG300Q1US11

 8.3. Size:880K  macmic
mmg300q060b6n.pdf pdf_icon

MG300Q1US11

MMG300Q060B6N 600V 300A IGBT Module JULY 2010 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability Positive Temperature Coefficient Integrated Gate Resistor APPLICATIONS Invertor Convertor Welder GQ Series Module SMPS and UPS Induction Heating ABSOLUTE MAXIMUM RATINGS TC=25C unless otherw

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History: CM150RX-12A | NGTB25N120FL | APTGF50X120TE3 | DIM800FSM17-A | IRG7PH37K10D | 6MBP50NA060-01 | FD400R33KF2C

Keywords - MG300Q1US11 transistor datasheet

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 MG300Q1US11 equivalent finder
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