MG50J2YS50 Datasheet and Replacement
Type Designator: MG50J2YS50
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 280 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 120 nS
Package: MODULE
MG50J2YS50 substitution
MG50J2YS50 Datasheet (PDF)
mmg50j120uz.pdf
MMG50J120UZ1200V 50A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES High Short Circuit Capability Free wheeling diodes with fast and soft reverse recovery VCE(sat) with positive temperature coefficient Ultra Low Loss,High Ruggedness Popular SOT-227 PackageAPPLICATIONS Invertor Convertor Welder SMPS and UPS Induction HeatingIGBT
Datasheet: MG25Q6ES51 , MG300J2YS40 , MG300J2YS50 , MG300N1US1 , MG300Q1US11 , MG300Q2YS40 , MG300Q2YS50 , MG50J1BS11 , IXRH40N120 , MG50J6ES50 , MG50Q1BS11 , MG50Q2YS40 , MG50Q2YS50 , MG50Q6ES40 , MG50Q6ES50A , MG600Q1US51 , MG75J1BS11 .
History: FGH60N60UFDTU-F085 | VS-GA200SA60UP
Keywords - MG50J2YS50 transistor datasheet
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History: FGH60N60UFDTU-F085 | VS-GA200SA60UP
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