MG50J2YS50 Specs and Replacement
Type Designator: MG50J2YS50
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 280 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Package: MODULE MG50J2YS50 Substitution - IGBT ⓘ Cross-Reference Search
MG50J2YS50 datasheet
mmg50j120uz.pdf
MMG50J120UZ 1200V 50A IGBT Module April 2015 Version 01 RoHS Compliant PRODUCT FEATURES High Short Circuit Capability Free wheeling diodes with fast and soft reverse recovery VCE(sat) with positive temperature coefficient Ultra Low Loss,High Ruggedness Popular SOT-227 Package APPLICATIONS Invertor Convertor Welder SMPS and UPS Induction Heating IGBT ... See More ⇒
Specs: MG25Q6ES51, MG300J2YS40, MG300J2YS50, MG300N1US1, MG300Q1US11, MG300Q2YS40, MG300Q2YS50, MG50J1BS11, FGL60N100BNTD, MG50J6ES50, MG50Q1BS11, MG50Q2YS40, MG50Q2YS50, MG50Q6ES40, MG50Q6ES50A, MG600Q1US51, MG75J1BS11
Keywords - MG50J2YS50 transistor spec
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