All IGBT. MG75J6ES50 Datasheet

 

MG75J6ES50 Datasheet and Replacement


   Type Designator: MG75J6ES50
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 390 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 120 nS
   Package: MODULE
 

 MG75J6ES50 substitution

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MG75J6ES50 Datasheet (PDF)

 ..1. Size:512K  toshiba
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MG75J6ES50

MG75J6ES50 TOSHIBA GTR Module Silicon N Channel IGBT MG75J6ES50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance. 6 IGBTs built into 1 package. Enhancement-mode. High speed : t = 0.30s (Max) (I = 75A) f C t = 0.15s (Max) (I = 75A) rr F Low saturation voltage : V = 2.70V

 9.1. Size:300K  toshiba
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MG75J6ES50

 9.2. Size:213K  toshiba
mg75j1bs11.pdf pdf_icon

MG75J6ES50

This datasheet has been downloaded from:www.DatasheetCatalog.comDatasheets for electronic components.

 9.3. Size:253K  toshiba
mg75j1zs40.pdf pdf_icon

MG75J6ES50

This datasheet has been downloaded from:www.DatasheetCatalog.comDatasheets for electronic components.

Datasheet: MG50Q6ES40 , MG50Q6ES50A , MG600Q1US51 , MG75J1BS11 , MG75J1ZS40 , MG75J1ZS50 , MG75J2YS50 , MG75J2YS91 , HGTG30N60A4 , MG75Q1BS11 , MG75Q2YS40 , MG75Q2YS42 , MG75Q2YS50 , MG75Q2YS51 , MIEB100W1200DPFTEH , MIEB101W1200DPFEH , MIG10Q806H .

History: GT5G102LB

Keywords - MG75J6ES50 transistor datasheet

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