MG75Q1BS11 Datasheet and Replacement
Type Designator: MG75Q1BS11
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 300 nS
Package: MODULE
MG75Q1BS11 substitution
MG75Q1BS11 Datasheet (PDF)
mg75q2ys50.pdf
MG75Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q2YS50 High Power Switching Applications Unit: mmMotor Control Applications High input impedance High speed : t = 0.3 s (Max) f @Iinductive load Low saturation voltage : V = 3.6 V (Max) CE (sat) Enhancement-mode Includes a complete half bridge in one package The electrodes are Isolated from ca
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: FGA25N120ANTDTU | IXGP20N60B | XD075H065CX1S3 | MIXA50WB600TED
Keywords - MG75Q1BS11 transistor datasheet
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History: FGA25N120ANTDTU | IXGP20N60B | XD075H065CX1S3 | MIXA50WB600TED
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