MG75Q1BS11 Specs and Replacement
Type Designator: MG75Q1BS11
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 75 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
Package: MODULE MG75Q1BS11 Substitution - IGBT ⓘ Cross-Reference Search
MG75Q1BS11 datasheet
mg75q2ys50.pdf
MG75Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q2YS50 High Power Switching Applications Unit mm Motor Control Applications High input impedance High speed t = 0.3 s (Max) f @Iinductive load Low saturation voltage V = 3.6 V (Max) CE (sat) Enhancement-mode Includes a complete half bridge in one package The electrodes are Isolated from ca... See More ⇒
Specs: MG50Q6ES50A, MG600Q1US51, MG75J1BS11, MG75J1ZS40, MG75J1ZS50, MG75J2YS50, MG75J2YS91, MG75J6ES50, KGF75N65KDF, MG75Q2YS40, MG75Q2YS42, MG75Q2YS50, MG75Q2YS51, MIEB100W1200DPFTEH, MIEB101W1200DPFEH, MIG10Q806H, MIG10Q806HA
Keywords - MG75Q1BS11 transistor spec
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