MG75Q2YS50 Datasheet and Replacement
Type Designator: MG75Q2YS50
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 600 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 50 nS
Package: MODULE
MG75Q2YS50 substitution
MG75Q2YS50 Datasheet (PDF)
mg75q2ys50.pdf
MG75Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q2YS50 High Power Switching Applications Unit: mmMotor Control Applications High input impedance High speed : t = 0.3 s (Max) f @Iinductive load Low saturation voltage : V = 3.6 V (Max) CE (sat) Enhancement-mode Includes a complete half bridge in one package The electrodes are Isolated from ca
Datasheet: MG75J1ZS40 , MG75J1ZS50 , MG75J2YS50 , MG75J2YS91 , MG75J6ES50 , MG75Q1BS11 , MG75Q2YS40 , MG75Q2YS42 , NCE80TD65BT , MG75Q2YS51 , MIEB100W1200DPFTEH , MIEB101W1200DPFEH , MIG10Q806H , MIG10Q806HA , MIG50Q201H , MITA150H1700TEH , MIXA100PF1200TMH .
History: VS-GB90DA60U | 2MBI300VH-120-50
Keywords - MG75Q2YS50 transistor datasheet
MG75Q2YS50 cross reference
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History: VS-GB90DA60U | 2MBI300VH-120-50
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