MG75Q2YS50 PDF and Equivalents Search

 

MG75Q2YS50 Specs and Replacement

Type Designator: MG75Q2YS50

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 600 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Package: MODULE

 MG75Q2YS50 Substitution

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MG75Q2YS50 datasheet

 ..1. Size:262K  toshiba
 mg75q2ys50.pdf pdf_icon

MG75Q2YS50

MG75Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q2YS50 High Power Switching Applications Unit mm Motor Control Applications High input impedance High speed t = 0.3 s (Max) f @Iinductive load Low saturation voltage V = 3.6 V (Max) CE (sat) Enhancement-mode Includes a complete half bridge in one package The electrodes are Isolated from ca... See More ⇒

 5.1. Size:338K  toshiba
 mg75q2ys51.pdf pdf_icon

MG75Q2YS50

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 mg75q2ys42.pdf pdf_icon

MG75Q2YS50

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 mg75q2ys40.pdf pdf_icon

MG75Q2YS50

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Specs: MG75J1ZS40, MG75J1ZS50, MG75J2YS50, MG75J2YS91, MG75J6ES50, MG75Q1BS11, MG75Q2YS40, MG75Q2YS42, IRGP4062D, MG75Q2YS51, MIEB100W1200DPFTEH, MIEB101W1200DPFEH, MIG10Q806H, MIG10Q806HA, MIG50Q201H, MITA150H1700TEH, MIXA100PF1200TMH

Keywords - MG75Q2YS50 transistor spec

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