MIEB101W1200DPFEH Specs and Replacement
Type Designator: MIEB101W1200DPFEH
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 600 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 171 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
Package: MODULE MIEB101W1200DPFEH Substitution - IGBTⓘ Cross-Reference Search
MIEB101W1200DPFEH datasheet
mieb101w1200dpfeh.pdf
MIEB 101W1200DPFEH Six-Pack VCES = 1200 V IC25 = 170 A SPT+ IGBT VCE(sat) typ. = 1.9 V Preliminary data Part name (Marking on product) MIEB101W1200DPFEH 13, 21 1 5 9 2 6 10 19 17 15 E 72873 3 7 11 8 12 4 14, 20 Features Application Package SPT+ IGBT technology AC motor control designed for wave soldering low saturation voltage AC servo and robot drive... See More ⇒
mieb101h1200eh.pdf
MIEB 101H1200EH IGBT Module VCES = 1200 V IC25 = 183 A H Bridge VCE(sat) = 1.8 V Part name (Marking on product) MIEB101H1200EH 13, 21 D1 D2 T1 T2 1 9 2 10 19 E72873 15 D3 D4 T3 T4 3 11 4 12 14, 20 Features Application Package SPT+ IGBT technology AC motor drives "E3-Pack" standard outline low saturation voltage Solar inverter Insulated copper b... See More ⇒
Specs: MG75J2YS91, MG75J6ES50, MG75Q1BS11, MG75Q2YS40, MG75Q2YS42, MG75Q2YS50, MG75Q2YS51, MIEB100W1200DPFTEH, CRG40T65AK5HD, MIG10Q806H, MIG10Q806HA, MIG50Q201H, MITA150H1700TEH, MIXA100PF1200TMH, MIXA100PM650TMI, MIXA150Q1200VA, MIXA150R1200VA
Keywords - MIEB101W1200DPFEH transistor spec
MIEB101W1200DPFEH cross reference
MIEB101W1200DPFEH equivalent finder
MIEB101W1200DPFEH lookup
MIEB101W1200DPFEH substitution
MIEB101W1200DPFEH replacement
History: IHW40N135R5 | IKA10N65ET6
🌐 : EN ES РУ
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
Popular searches
3sk73 | 13n10 mosfet | 2n3565 transistor | datasheet irfz44n | 2sd1047 transistor | mj802 | bu508a | bc560c